Experimental analysis and low-damage machining strategy for composite ultrasonic vibration-assisted grinding of silicon carbide based on DA-MLP-NSGA-II algorithm
IF 4.2 3区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Chenwei Dai , Qihui Cheng , Qing Miao , Zhen Yin , Ming Zhang , Jiajia Chen
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引用次数: 0
Abstract
At present, because of the lack of ultrasonic composite vibration assisted grinding mechanism, neural network optimization algorithm (NNOA) is used to optimize the processing results. In NNOA, multi-layer perceptron (MLP) neural network model and non-dominated sorting genetic algorithm-II (NSGA-II) are very efficient and accurate methods. In this paper, based on the measurement and analysis of the specific ultrasonic vibration device, the CUVAG experiments on silicon carbide (SiC) ceramic were carried out to investigate the influence of processing parameters on the grinding forces, the ground surface roughness and morphology, and the subsurface damage. Then, the brittle-ductile removal behavior of hard-and-brittle materials could be revealed according to the above analysis. After that, MLP model and NSGA-II were utilized to predict and optimize the processing results in CUVAG. The results show that the grinding forces are basically constant, the surface quality deteriorates, and the subsurface damage increases with increased axial vibration amplitude and workpiece infeed speed, but all fluctuate with enlarged wheel speed, and turns at the inflection point of brittle-ductile transition with increased elliptic vibration amplitude. The fitting goodness R2 of the established MLP neural network prediction model is between 0.94 and 0.975, and the process parameters calculated by the NSGA-II optimization algorithm are verified. With optimized processing parameters, the grinding forces are reduced by about 13 %, the surface roughness is reduced to Ra0.037 μm (by 29 %), and the depth of subsurface damage is reduced by 68 %.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.