Thermoluminescence behaviour and kinetic analysis of a novel Tb³⁺-Doped LaCa₄O(BO₃)₃ phosphor: Impacts of heating rates and dose

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
O. Madkhali , K. Bulcar , A. Barad , T. Zelai , G. Souadi , Hussain J. Alathlawi , U.H. Kaynar , M. Topaksu , N. Can
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引用次数: 0

Abstract

This study employs kinetic analysis methods to comprehensively understand the thermoluminescence (TL) behaviour of Tb³⁺-doped LaCa₄O(BO₃)₃ (LACOB), applying the Hoogenstraaten and Booth-Bohun-Parfianovitch methods, as well as the Tm-Tstop and Glow Curve Deconvolution (GCD) techniques. Optimal TL intensity was found at a Tb³⁺ concentration of 2 wt%, beyond which concentration quenching occurred. The complete TL glow curve before preheating displays two peaks at approximately 70 °C and 286 °C. After preheating, only the 286 °C peak remains, due to its greater stability and intensity, making it the primary TL peak relevant for dosimetric applications. As the heating rate increased, the TL glow peaks shifted to higher temperatures and exhibited reduced intensity due to thermal quenching. The TL intensity exhibited superlinear behaviour at lower doses (0.5–20 Gy), followed by nearly linear behaviour at intermediate doses (30–100 Gy), and sublinear behaviour at higher doses. Anomalous fading of the TL signal was observed in LACOB:2 wt%Tb, suggesting competition with radiationless transitions. Activation energy values derived from Hoogenstraaten and Booth-Bohun-Parfianovitch methods showed close alignment, supporting the reliability of the kinetic analysis. The Tm-Tstop and GCD analyses with preheating identified four distinct TL glow peaks, with activation energies between 1.72 and 1.82 eV. Analysis whole glow curve revealed nine TL glow peaks overall, ranging from 1.08 to 1.82 eV, reflecting a complex trap structure with continuous energy distributions. The GCD method yielded a Figure of Merit (FOM) of 2.67 % with preheating and 2.84 without preheating, indicating a strong fit between experimental and theoretical data in both cases. The material demonstrated excellent stability and reusability, making it a strong candidate for dosimetric applications.
掺杂铽元素的新型 LaCa₄O(BO₃)₃荧光粉的热致发光行为和动力学分析:加热速率和剂量的影响
本研究采用动力学分析方法,应用 Hoogenstraaten 和 Booth-Bohun-Parfianovitch 方法以及 Tm-Tstop 和辉光曲线解卷积 (GCD) 技术,全面了解了掺杂 Tb³⁺ 的 LaCa₄O(BO₃)₃(LACOB)的热致发光 (TL) 行为。在 Tb³⁺ 浓度为 2 wt% 时发现了最佳 TL 强度,超过该浓度时会出现浓度淬灭。预热前的完整 TL 辉光曲线在大约 70 ℃ 和 286 ℃ 处显示两个峰值。预热后,只有 286 °C 峰值因其更高的稳定性和强度而保留下来,成为与剂量测定应用相关的主要 TL 峰值。随着加热速率的增加,TL 辉光峰转移到更高的温度,并由于热淬火而强度降低。TL 强度在较低剂量(0.5-20 Gy)时表现出超线性,在中等剂量(30-100 Gy)时表现出近似线性,在较高剂量时表现出亚线性。在 LACOB:2 wt%Tb 中观察到 TL 信号的异常衰减,这表明与无辐射跃迁存在竞争。根据 Hoogenstraaten 和 Booth-Bohun-Parfianovitch 方法得出的活化能值显示出密切的一致性,支持了动力学分析的可靠性。预热的 Tm-Tstop 和 GCD 分析确定了四个不同的 TL 辉光峰,其活化能在 1.72 和 1.82 eV 之间。对整条辉光曲线的分析显示出九个 TL 辉光峰,范围在 1.08 至 1.82 eV 之间,反映出具有连续能量分布的复杂阱结构。采用 GCD 方法得出的优越性图(FOM)在预热时为 2.67%,在不预热时为 2.84%,表明这两种情况下实验数据和理论数据的拟合度都很高。该材料具有出色的稳定性和可重复使用性,是剂量测定应用的理想选择。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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