Low current driven blue-violet light-emitting diodes based on p-GaN/i-Ga2O3/n-Ga2O3:Si structure

IF 4.6 2区 物理与天体物理 Q1 OPTICS
Wenwen Jin , Xian Zhang , Guojiao Xiang , Zhiang Yue , Enqin Zhao , Shuaikang Wei , Jingwen Shu , Hangyu He , Meibo Xin , Fujing Dong , Yang Zhao , Hui Wang
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Abstract

This paper reports a low current driven LED with p-GaN/i-Ga2O3/n-Ga2O3:Si structure prepared by radio frequency (RF) magnetron sputtering, the driving current of the device is only 0.02 mA. Compared with the reported drive current of the LEDs, the reduction is 100 or even 1000 times. Through the study of its electrical properties, it was found that it had excellent rectification characteristics at different ambient temperatures and the turn-on voltage was about 1.8 V. In addition, the leakage current was as low as 4.30 × 10-8 mA. Through the electroluminescence test, it was found that the device had the function of emitting in the ultraviolet (363 nm) and visible (425 nm) region, which realized the blue-violet luminescence at room temperature. Furthermore, the device had excellent high temperature color stability and ultra-low color temperature of 1924 K. The color coordinate of the device at room temperature was (0.1905,0.0955). A detailed study was conducted on the electroluminescence mechanism of the device through its band structure, and the causes of the luminescence were analyzed through the Gaussian fitting of the EL spectrum.
基于 p-GaN/i-Ga2O3/n-Ga2O3:Si 结构的低电流驱动型蓝紫色发光二极管
本文报道了一种采用射频(RF)磁控溅射法制备的 p-GaN/i-Ga2O3/n-Ga2O3:Si 结构的低电流驱动 LED,该器件的驱动电流仅为 0.02 mA。与所报道的 LED 驱动电流相比,降低了 100 甚至 1000 倍。通过对其电学特性的研究发现,它在不同环境温度下都具有出色的整流特性,开启电压约为 1.8 V,而且漏电流低至 4.30 × 10-8 mA。通过电致发光测试发现,该器件具有在紫外(363 纳米)和可见光(425 纳米)区域发光的功能,实现了室温下的蓝紫色发光。此外,该器件还具有极佳的高温色稳定性和 1924 K 的超低色温,室温下的色坐标为(0.1905,0.0955)。研究人员通过该器件的能带结构对其电致发光机理进行了详细研究,并通过电致发光光谱的高斯拟合分析了发光原因。
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来源期刊
CiteScore
8.50
自引率
10.00%
发文量
1060
审稿时长
3.4 months
期刊介绍: Optics & Laser Technology aims to provide a vehicle for the publication of a broad range of high quality research and review papers in those fields of scientific and engineering research appertaining to the development and application of the technology of optics and lasers. Papers describing original work in these areas are submitted to rigorous refereeing prior to acceptance for publication. The scope of Optics & Laser Technology encompasses, but is not restricted to, the following areas: •development in all types of lasers •developments in optoelectronic devices and photonics •developments in new photonics and optical concepts •developments in conventional optics, optical instruments and components •techniques of optical metrology, including interferometry and optical fibre sensors •LIDAR and other non-contact optical measurement techniques, including optical methods in heat and fluid flow •applications of lasers to materials processing, optical NDT display (including holography) and optical communication •research and development in the field of laser safety including studies of hazards resulting from the applications of lasers (laser safety, hazards of laser fume) •developments in optical computing and optical information processing •developments in new optical materials •developments in new optical characterization methods and techniques •developments in quantum optics •developments in light assisted micro and nanofabrication methods and techniques •developments in nanophotonics and biophotonics •developments in imaging processing and systems
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