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Improving Doping Efficiency of Mist-CVD Epitaxy for Tin-Doped α-Ga₂O₃ Using Tin Chloride Pentahydrate

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-10-07 DOI:10.1109/TSM.2024.3475730

Han-Yin Liu;Yun-Yun Cheng;Wei-Han Chen;Ko-Fan Hu;Nei-En Chiu

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引用次数: 0

Abstract

Tin chloride pentahydrate (SnCl

${_{{4}}} \cdot 5$

H2O) is used as the dopant precursor to form the n-type

$\alpha $

-Ga2O3 in this study. The X-ray diffraction (XRD) and high-resolution transmission electron microscope (HR-TEM) confirm that the single-crystalline

$\alpha $

-Ga2O3:SnCl

${_{{4}}} \cdot 5$

H2O epi-layer was grown on the r-plane sapphire substrate using mist chemical vapor deposition (mist-CVD). When the Sn doping atomic concentrations are the same, the electron concentration of

$\alpha $

-Ga2O3:SnCl

${_{{4}}} \cdot 5$

H2O is higher than that of

$\alpha $

-Ga2O3:SnCl

${_{{2}}} \cdot 2$

H2O. The lower thermal decomposition temperature and lower residues of

$\alpha $

-Ga2O3:SnCl

${_{{4}}} \cdot 5$

H2O are confirmed in thermogravimetric (TGA) analysis. Sn

$3d_{5/2}$

binding energy spectra observed by X-ray photoelectron spectroscopy (XPS) show that SnCl

${_{{4}}} \cdot 5$

H2O provides more

$Sn^{4+}$

than SnCl

${_{{2}}} \cdot 2$

H2O. The specific contact resistivity of

$\alpha $

-Ga2O3:SnCl

${_{{4}}} \cdot 5$

H2O reaches

$1.62\times 10{^{-}5 }~\Omega $

-cm2 with

$10^{20}$

$^{-}3 $

Sn doping concentration. Moreover, the power figure-of-merit (PFoM) of

$\alpha $

-Ga2O3:SnCl

${_{{4}}} \cdot 5$

H2O-based lateral Schottky barrier diode (SBD) is 0.356 GW/cm2 which is comparable to

$\beta $

-Ga2O3-based SBD.

查看原文本刊更多论文

利用五水合氯化锡提高掺锡 α-Ga₂O₃ 的雾化-气相沉积外延的掺杂效率

本研究使用五水氯化锡（SnCl ${_{{4}}} \cdot 5$ H2O）作为掺杂剂前驱体来形成n型$\alpha $ -Ga2O3。X 射线衍射（XRD）和高分辨率透射电子显微镜（HR-TEM）证实了单晶$\alpha $ -Ga2O3:SnCl ${_{{4}}} H2O的形成。\cdot 5$ H2O 外延层是利用雾状化学气相沉积（mist-CVD）技术在 r 平面蓝宝石衬底上生长出来的。当掺杂的Sn原子浓度相同时，$\alpha $ -Ga2O3:SnCl ${_{{4}}}\cdot 5$ H2O的电子浓度也相同。\cdot 5$ H2O 的电子浓度高于 $\alpha $ -Ga2O3:SnCl ${_{{2}}} H2O 的电子浓度。\cdot 2$ H2O。$α $ -Ga2O3:SnCl ${_{{4}} $\cdot 5$ H2O 的热分解温度较低，残留物也较少。｝\热重分析证实了这一点。通过 X 射线光电子能谱（XPS）观察到的 Sn $3d_{5/2}$ 结合能谱显示，SnCl ${_{4}}\cdot 5$ H2O 提供的 $Sn^{4+}$ 比 SnCl ${_{{2}} 提供的 $Sn^{4+}$ 多。\cdot 2$ H2O 提供更多的 $Sn^{4+}$。$\alpha $ -Ga2O3:SnCl ${_{{4}} 的比接触电阻率为｝\cdot 5$ H2O达到1.62/times 10{^{-}5 }~\Omega $ -cm2，掺杂浓度为10^{20}$ cm $^{-}3 $ Sn。此外，$\alpha $ -Ga2O3:SnCl ${_{{4}} 的功率因数（PFoM）也很高。｝\cdot 5$ H2O 基横向肖特基势垒二极管（SBD）的功率为 0.356 GW/cm2，与 $\beta $ -Ga2O3 基 SBD 相当。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.