Ultra-high response and excellent selectivity of triethylamine gas sensor based on Co3O4-ZnO porous hierarchical heterostructure

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-11-17 DOI:10.1016/j.mssp.2024.109127

Sanling Fu , Menghao Yin , Gaojie Li

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引用次数: 0

Abstract

In recent years, metal oxide semiconductor nanomaterials have been found important applications in the detection of volatile organic compounds (VOCs) due to their excellent gas-sensing properties. In this study, Co₃O₄-ZnO porous hierarchical heterostructure nanomaterial was synthesised via the facile hydrothermal route. The sensors prepared from pristine ZnO and Co₃O₄-ZnO composites exhibited excellent triethylamine sensing properties. The response value of pristine ZnO to 50 ppm triethylamine was 178 at 300 °C, while the response value of Co0.5 sensor reached 2036 under the same condition, and the response value of Co0.5 sensor was 2.6 in a 500 ppb triethylamine atmosphere. Meanwhile, the selectivity of Co₃O₄-ZnO sample was also significantly improved compared with pristine ZnO, and the obtained sensors had excellent repeatability and long-term stability. Therefore, the Co₃O₄-ZnO sensor in this work had potential applications in practicable triethylamine detection. Such an exceptional triethylamine sensing performance could be sourced from its unique porous hierarchical structure and the catalytic effect of the introduced Co₃O₄ on the surface reaction, as well as the synergistic effect of ZnO and Co₃O₄.

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基于 Co3O4-ZnO 多孔分层异质结构的三乙胺气体传感器具有超高响应和优异选择性

近年来，金属氧化物半导体纳米材料因其优异的气体传感特性，在挥发性有机化合物（VOC）检测中得到了重要应用。本研究通过简便的水热法合成了 Co3O4-ZnO 多孔分层异质结构纳米材料。原始 ZnO 和 Co3O4-ZnO 复合材料制备的传感器具有优异的三乙胺传感性能。原始 ZnO 在 300 ℃ 下对 50 ppm 三乙胺的响应值为 178，而 Co0.5 传感器在相同条件下的响应值达到了 2036，在 500 ppb 三乙胺气氛下，Co0.5 传感器的响应值为 2.6。同时，与原始 ZnO 相比，Co3O4-ZnO 样品的选择性也有显著提高，所获得的传感器具有良好的重复性和长期稳定性。因此，本研究中的 Co3O4-ZnO 传感器在实际的三乙胺检测中具有潜在的应用价值。独特的多孔分层结构、引入的 Co3O4 对表面反应的催化作用以及 ZnO 和 Co3O4 的协同效应，都是三乙胺传感器具有如此优异性能的原因。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.