Synthesis and characterization of InGaZnO nanocomposites: An insight of optical, dielectric, and magnetic properties

IF 3.1 3区 物理与天体物理 Q2 Engineering
Optik Pub Date : 2024-11-10 DOI:10.1016/j.ijleo.2024.172094
Zainab Bashir , Zohra Nazir Kayani , Salma Waseem , Saira Riaz , Shahzad Naseem
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Abstract

In this study, pure Indium oxide (In2O3 100 %) and its composite films Indium gallium oxide (IGO 50 %:50 %), and Indium gallium zinc oxide (IGZO 33 %:33 %:34 %) are deposited on glass substrate by Sol-gel dip coating method. Indium oxide and its composites have a high degree of crystallization, as evident by the strong diffraction peaks. The SEM images depict distinctly diverse morphologies of nanostructures varied in size from 22.2 nm to 138 nm. The wider band gap (Eg) engineering (reported (Eg≈ 3.62 eV)–In2O3, (Eg ≈ 3.83 eV)–IGO, (Eg≈3.74 eV) –IGZO) and heterostructure formation is also advantageous for novel In2O3 applications in advanced (transparent) devices and sensors. Complex impedance analysis provides insights into the grains and grain boundaries of In2O3 and its composite films (IGO, IGZO). The VSM measurements confirms that IGZO has a higher saturation magnetization value of 13.33 emu/cm3 and a lower coercivity value of 429.54 Oe as compared to In2O3 and IGO highlighting their magnetic properties suitable for spintronic and high-frequency device applications.
InGaZnO 纳米复合材料的合成与表征:对光学、介电和磁性能的深入了解
本研究采用溶胶-凝胶浸涂法在玻璃基底上沉积了纯氧化铟(In2O3 100 %)及其复合薄膜氧化铟镓(IGO 50 %:50 %)和氧化铟镓锌(IGZO 33 %:33 %:34 %)。氧化铟及其复合材料具有很高的结晶度,这一点可以从强烈的衍射峰上看出来。扫描电子显微镜图像描绘了纳米结构的不同形态,尺寸从 22.2 纳米到 138 纳米不等。更宽的带隙(Eg)工程(据报道(Eg≈ 3.62 eV)-In2O3、(Eg ≈ 3.83 eV)-IGO、(Eg≈3.74 eV)-IGZO)和异质结构的形成也有利于新型 In2O3 在先进(透明)设备和传感器中的应用。复合阻抗分析有助于深入了解 In2O3 及其复合薄膜(IGO、IGZO)的晶粒和晶界。VSM 测量证实,与 In2O3 和 IGO 相比,IGZO 的饱和磁化值更高,为 13.33 emu/cm3,矫顽力值更低,为 429.54 Oe。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Optik
Optik 物理-光学
CiteScore
6.90
自引率
12.90%
发文量
1471
审稿时长
46 days
期刊介绍: Optik publishes articles on all subjects related to light and electron optics and offers a survey on the state of research and technical development within the following fields: Optics: -Optics design, geometrical and beam optics, wave optics- Optical and micro-optical components, diffractive optics, devices and systems- Photoelectric and optoelectronic devices- Optical properties of materials, nonlinear optics, wave propagation and transmission in homogeneous and inhomogeneous materials- Information optics, image formation and processing, holographic techniques, microscopes and spectrometer techniques, and image analysis- Optical testing and measuring techniques- Optical communication and computing- Physiological optics- As well as other related topics.
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