Influence of Ag-Bi2S3 nanocomposites for highly sensitive and selective Cl2 gas sensors: Synthesis, characterization, and gas sensing performance

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-11-02 DOI:10.1016/j.sse.2024.109024

Gangadhar Bandewad , Chetan Kamble , Sunil Pawar

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Abstract

The gas sensing capabilities of Bi₂S₃ chalcogenide have been actively enhanced and explored revealing its potential for high-performance Cl₂ gas detection under different environmental conditions and sensing configurations. This work successfully synthesized Bi₂S₃ material via the SILAR method and further enhanced its sensing capabilities by fabricating Ag-Bi₂S₃ nanocomposite. Both pristine Bi₂S₃ and Ag-Bi₂S₃ nanocomposite films underwent comprehensive characterization utilizing techniques such as FESEM, EDX, XRD, XPS, and RAMAN to analyze their morphological, structural, and chemical properties. Gas sensing capabilities were evaluated across a temperature range of 26–350 °C and varying Cl₂ gas concentrations (0.1–50 ppm). The findings reveal that the Ag-Bi₂S₃ sensor demonstrates notably superior Cl₂ sensing response, particularly at an operational temperature of 150 °C, suggesting its promising potential for Cl₂ detection. The LOD has been calculated for Ag-Bi₂S₃ sensor showing results of 0.150 better than pristine Bi₂S_3. HOMO-LUMO and PCA analysis for sensors has been studied to understand their capabilities with different gas sensing.

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Ag-Bi2S3 纳米复合材料对高灵敏度和选择性 Cl2 气体传感器的影响：合成、表征和气体传感性能

Bi2S3 Chalcogenide 的气体传感能力得到了积极的提升和探索，揭示了其在不同环境条件和传感配置下进行高性能 Cl2 气体检测的潜力。这项研究通过 SILAR 方法成功合成了 Bi2S3 材料，并通过制备 Ag-Bi2S3 纳米复合材料进一步增强了其传感能力。利用 FESEM、EDX、XRD、XPS 和 RAMAN 等技术对原始 Bi2S3 和 Ag-Bi2S3 纳米复合薄膜进行了全面表征，分析其形态、结构和化学特性。在 26-350 °C 的温度范围和不同的 Cl2 气体浓度（0.1-50 ppm）下，对其气体传感能力进行了评估。研究结果表明，Ag-Bi2S3 传感器的 Cl2 传感响应明显优于其他传感器，尤其是在 150 ℃ 的工作温度下，这表明它在 Cl2 检测方面具有很大的潜力。计算得出的 Ag-Bi2S3 传感器的 LOD 值比原始 Bi2S3 高 0.150。对传感器的 HOMO-LUMO 和 PCA 分析进行了研究，以了解它们对不同气体的传感能力。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.