Numerical simulation of novel stepped hybrid bonding interface using finite element analysis

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-11-09 DOI:10.1016/j.mssp.2024.109082

Wentao Ni , Can Sheng , Bo Zhao , Zhiqiang Tian , Min Chen , Shizhao Wang , Gai Wu

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引用次数: 0

Abstract

3D integration using advanced packaging and high-density chip stacking technologies has been seen as a key technological breakthrough to meet the market demand in the post-Moore era. In recent years, hybrid bonding (HB) has been regarded as a key technology for realizing high-density packaging due to its advantages such as smaller bonding space and faster electrical signal transmission. In this paper, a novel copper/polymer hybrid bonding structure is proposed, which can realize a stepped periodic bonding interface that has higher bonding strength compared with the traditional bonding interface and can effectively resist the interface failure caused by shear. The peeling stress of the bonding interface under different geometries, material parameters and process conditions is derived and compared by numerical simulation, and the risk of debonding is evaluated. It is shown that the novel structure can realize higher shear strength bonding within a wide window of process parameters.

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利用有限元分析对新型阶梯式混合粘接界面进行数值模拟

采用先进封装和高密度芯片堆叠技术的三维集成被视为后摩尔时代满足市场需求的关键技术突破。近年来，混合键合（HB）因其键合空间更小、电信号传输更快等优势，被视为实现高密度封装的关键技术。本文提出了一种新型铜/聚合物混合键合结构，该结构可实现阶梯式周期键合界面，与传统键合界面相比具有更高的键合强度，并能有效抵抗剪切力导致的界面失效。通过数值模拟推导和比较了不同几何形状、材料参数和工艺条件下粘接界面的剥离应力，并评估了脱粘风险。结果表明，这种新型结构可在较宽的工艺参数窗口内实现较高剪切强度的粘接。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.