Investigation of self-selective RRAM based on V/ITO structure with rapid thermal annealed ITO for synapse emulation

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-11-10 DOI:10.1016/j.mssp.2024.109112

Haoyu Xu , He Liu , Chenming Dong , Chunbo Li , Wei Mi , Di Wang , Linan He , Liwei Zhou , Jinshi Zhao

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引用次数: 0

Abstract

This paper focuses on the investigation of V/ITO (O₂ Rapid Thermal Annealing)-based Self-Selective Resistive Random-Access Memory (RRAM) device. In this study, the natural oxidation of Vanadium top electrode and the rapid thermal annealing (RTA) process greatly simplified the device fabrication process. The VO₂-based Selector, formed by the natural oxidation of the Vanadium electrode, effectively suppresses current and is directly integrated with the ITO layer, eliminating the need for additional serial Selector. The oxygen content of the ITO film is significantly increased by the RTA process, enabling the previously conductive ITO material to be used as the RRAM insulating layer without the need for additional deposition of insulating layer. This V/ITO (O₂ RTA) structure not only exhibits highly uniform resistance distributions (σ/μ<2.8 %) and endurance stability (10000 cycles), but also effectively simulates synaptic plasticity, exhibiting both short-term and long-term memory behaviors. Notably, potentiation and depression characteristics are displayed by the device when continuous pulse voltage is applied. These advancements underscore the innovation and applicability of RTA-treated ITO films in next-generation memory technologies.

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基于快速热退火 ITO 的 V/ITO 结构的自选择性 RRAM 用于突触仿真的研究

本文重点研究了基于钒/ITO（O2 快速热退火）的自选择电阻式随机存取存储器（RRAM）器件。在这项研究中，钒顶电极的自然氧化和快速热退火（RTA）工艺大大简化了器件的制造过程。由钒电极自然氧化形成的基于 VO2 的选择器可有效抑制电流，并直接与 ITO 层集成，无需额外的串行选择器。通过 RTA 工艺，ITO 薄膜的氧含量显著增加，从而使以前的导电 ITO 材料可用作 RRAM 绝缘层，而无需额外沉积绝缘层。这种 V/ITO（O2 RTA）结构不仅具有高度均匀的电阻分布（σ/μ<2.8 %）和耐久稳定性（10000 次循环），还能有效模拟突触可塑性，表现出短期和长期记忆行为。值得注意的是，当施加连续脉冲电压时，该器件会显示出电位增强和抑制特性。这些进步凸显了 RTA 处理过的 ITO 薄膜在下一代存储器技术中的创新性和适用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.