High response acetone sensor with ppb detection based on Pd-Pt/ZnO nanoflowers in-situ grown on planar substrates

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-11-09 DOI:10.1016/j.mssp.2024.109100

Yanhu Li , Mei Chen , Linghong Xue , Xu Li , Qingji Wang

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引用次数: 0

Abstract

Metal oxide semiconductor (MOS) sensor, one of the most widely used gas sensors, faces significant challenges in achieving lower detection limit. Addressing this issue, the utilization and strategic design of bimetallic catalysts present a promising avenue. In this paper, Pd-Pt was in-situ grown on ZnO nanoflowers directly prepared on planar substrate and a sensor for detecting acetone was developed. The test results reveal that the Pd-Pt/ZnO nanoflowers sensor exhibits a remarkable 107.6 response to 100 ppm acetone at 350 °C, while presenting a rapid response (15s). Moreover, this sensor demonstrates excellent capability in detecting acetone at concentrations as low as 1 ppb, showcasing impressive gas-sensing performance. The response of the sensor to 100 ppm acetone is twice that of ethanol at the same concentration. The exceptional performance of the sensor results from its distinctive nanoflower structure and the catalytic effect of the Pd-Pt, which offers an extensive surface area and enhances the rate of redox reaction for gas molecules. This in-situ grown method has great potential for improving the gas-sensing performance in gas sensor.

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基于在平面基底上原位生长的 Pd-Pt/ZnO 纳米流的ppb级高响应丙酮传感器

金属氧化物半导体（MOS）传感器是应用最广泛的气体传感器之一，但在实现较低检测限方面却面临着巨大挑战。为解决这一问题，利用并战略性地设计双金属催化剂是一条大有可为的途径。本文在平面基底上直接制备的 ZnO 纳米花上原位生长了钯铂，并开发了一种用于检测丙酮的传感器。测试结果表明，Pd-Pt/ZnO 纳米流传感器在 350 °C 温度下对 100 ppm 丙酮的响应为 107.6，而且响应速度很快（15 秒）。此外，该传感器在检测浓度低至 1 ppb 的丙酮时表现出卓越的能力，显示出令人印象深刻的气体传感性能。传感器对 100 ppm 丙酮的响应速度是相同浓度乙醇的两倍。传感器的优异性能得益于其独特的纳米花结构和钯铂的催化作用，钯铂提供了广泛的表面积，提高了气体分子氧化还原反应的速率。这种原位生长方法在提高气体传感器的气体传感性能方面具有巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.