Pr3+ ions activated TiO2 nanoparticles as electron transport layer for copper based (CH3NH2)2CuBr4 perovskites solar cells

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-11-08 DOI:10.1016/j.mssp.2024.109093

R. Vishwanath , R. Ranjith , K. Munirathnam , J. Shim , P.C. Nagajyothi , Sabah Ansar , V. Manjunath

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引用次数: 0

Abstract

In emerging organic-inorganic perovskite solar cells (PSCs), the role of efficient electron transport layers (ETLs) is critical for electron transfer and hole blocking. TiO₂ is one of the widely reported ETLs but limits the performance of the devices exhibiting restricted electron mobility and numerous defect states. The process of doping rare earth ions has been an effective approach in improving the electronic and optical properties of TiO₂ for enhanced efficiency of PSCs. The present work studies the effect of praseodymium (Pr³⁺) doped TiO₂ prepared via sol-gel technique as electron transport layers for lead-free perovskite solar cells. The X-ray diffraction (XRD) and diffuse reflectance spectroscopy (DRS) studies showed that the crystallite size and bandgap of the particles reduced as a function of Pr³⁺ doping concentration. The X-ray photoelectron spectroscopy (XPS) analysis of the samples inferred that Pr³⁺ ions majorly remained on the TiO₂ surface. Copper-based (CH₃NH₂)₂CuBr₄ perovskites were synthesized by solution method as an active layer for the solar cells. XRD, FTIR (Fourier Transform Infrared Spectroscopy) and XPS analysis confirmed the formation of 2D-perovskite phase of the samples. The scanning electron microscopy (SEM) analysis of the perovskites revealed well crystalline orthorhombic structures. Current-voltage measurements were carried out to study better passivation properties with rare-earth doping of the ETLs and was found to be most enhanced for 0.07 Pr³⁺ concentration. Electro-chemical Impedance Spectroscopy (EIS) studies of the solar cells showed a reduced interface recombination and enhance charge transfer properties as a function of rare-earth dopant concentration. Further, the fabricated perovskite solar cells showcased better performance with xPr³⁺:TiO₂ ETLs and the maximum efficiency of ∼1.25 % was obtained for TiO₂: 0.07 Pr³⁺.

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将 Pr3+ 离子活化的 TiO2 纳米粒子作为铜基 (CH3NH2)2CuBr4 过氧化物太阳能电池的电子传输层

在新兴的有机-无机包晶太阳能电池（PSCs）中，高效电子传输层（ETLs）对于电子传输和空穴阻挡至关重要。二氧化钛（TiO2）是被广泛报道的电子传输层之一，但其电子迁移率受限，且存在大量缺陷态，从而限制了器件的性能。掺杂稀土离子是改善 TiO2 电子和光学特性以提高 PSC 效率的有效方法。本论文研究了通过溶胶-凝胶技术制备的掺杂镨（Pr3+）TiO2 作为无铅过氧化物太阳能电池电子传输层的效果。X 射线衍射（XRD）和漫反射光谱（DRS）研究表明，颗粒的晶体尺寸和带隙随 Pr3+ 掺杂浓度的变化而减小。样品的 X 射线光电子能谱（XPS）分析表明，Pr3+ 离子主要停留在 TiO2 表面。采用溶液法合成了铜基 (CH3NH2)2CuBr4 包晶体，作为太阳能电池的活性层。XRD、FTIR（傅立叶变换红外光谱）和 XPS 分析证实了样品形成了二维包晶相。对包晶石的扫描电子显微镜（SEM）分析表明其具有良好的正方晶结构。为了研究 ETL 掺杂稀土后更好的钝化特性，进行了电流-电压测量，结果发现 0.07 Pr3+ 浓度的 ETL 增强效果最好。太阳能电池的电化学阻抗光谱（EIS）研究表明，随着稀土掺杂浓度的增加，界面重组减少，电荷转移特性增强。此外，使用 xPr3+:TiO2 ETL 制作的过氧化物太阳能电池性能更好，TiO2.0.07 Pr3+:TiO2 ETL 的最高效率为 1.25%：0.07 Pr3+ 的最大效率为 1.25%。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.