Low-temperature photo imageable dielectric for redistribution layers in advanced packaging application

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-11-10 DOI:10.1016/j.mssp.2024.109083

Shie-Ping Chang , Zih-I Chuang , Yun-Jung Wu , E-Ming Ho , Yuan-Chiu Huang , Kuan-Neng Chen

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Abstract

This study investigates the low-temperature photo imageable dielectric (LT-PID) as a next-generation material for redistribution layers (RDLs) in advanced packaging applications, with a focus on high-performance computing (HPC) and Artificial Intelligence (AI). LT-PID provides several critical advantages, including exceptionally low curing shrinkage, superior adhesion to key substrates such as silicon (Si), silicon oxide (SiO_x), silicon nitride (SiN_x), and copper (Cu), and robust thermal stability at lower processing temperatures. These properties make LT-PID an excellent candidate for enhancing the mechanical stability and reliability of fine-pitch interposers, a crucial requirement for heterogeneous integration in advanced packaging technologies. In addition, the optimization of lithography and plasma descum processes has shown that LT-PID contributes to improved contact resistance and uniform surface morphology. The use of O₂/SF₆ plasma descum significantly reduces via-bottom residue, further enhancing the electrical performance of Cu interconnects.

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先进封装应用中用于再分布层的低温光成像电介质

本研究调查了作为先进封装应用中再分布层 (RDL) 下一代材料的低温光致图像电介质 (LT-PID)，重点关注高性能计算 (HPC) 和人工智能 (AI)。LT-PID 具有多项关键优势，包括极低的固化收缩率、与硅 (Si)、氧化硅 (SiOx)、氮化硅 (SiNx) 和铜 (Cu) 等关键基底的出色粘附性，以及在较低加工温度下的强大热稳定性。这些特性使 LT-PID 成为提高细间距插针机械稳定性和可靠性的绝佳候选材料，而这正是先进封装技术中异质集成的关键要求。此外，光刻和等离子除渣工艺的优化表明，LT-PID 还有助于提高接触电阻和均匀的表面形态。使用 O2/SF6 等离子体除渣可显著减少通孔底部残留物，进一步提高铜互连器件的电气性能。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.