Highly efficient CoAl-LDH/(110) facet-exposed BiOBr catalysts: Promotional effect of Z-type heterojunction and oxygen vacancies in photocatalytic ciprofloxacin degradation

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-11-09 DOI:10.1016/j.mssp.2024.109105

Shijie Yu, Heng Zhang, Dongfang Wu

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Abstract

Photocatalysis has received extensive attention as a sustainable technology. Herein, a 2D/2D CoAl-LDH/(110) facet-exposed BiOBr Z-type heterojunction photocatalyst enriched with oxygen vacancies (OVs) and Lewis acid sites was prepared by deposition-precipitation method. Results show that the removal of ciprofloxacin by the optimal heterojunction achieves 88 % within 10 min and 98.6 % within 95 min under visible light. Characterization and DFT calculation reveal that CoAl-LDH induces high-energy (110) crystal plane exposure of BiOBr, resulting in the generation of surface OVs and Lewis acid sites. OVs contribute to the adsorption of dissolved oxygen in water, thereby facilitating the generation of •O₂⁻. And Bi^(3−x)+ Lewis acid sites promote the adsorption and degradation of reactant molecules. The charge transfer recombination mechanism of the heterojunction enhances the utilization of photogenerated electrons and holes, improving the catalyst photostability. This work provides a simple method for constructing efficient and stable Z-type heterojunctions with defects for photocatalytic water treatment.

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高效 CoAl-LDH/(110) 面暴露 BiOBr 催化剂：Z 型异质结和氧空位在光催化降解环丙沙星中的促进作用

光催化作为一种可持续发展技术受到了广泛关注。本文采用沉积-沉淀法制备了一种富含氧空位（OVs）和路易斯酸位点的 2D/2D CoAl-LDH/(110) 面暴露 BiOBr Z 型异质结光催化剂。结果表明，在可见光条件下，最佳异质结对环丙沙星的去除率在 10 分钟内达到 88%，在 95 分钟内达到 98.6%。表征和 DFT 计算显示，CoAl-LDH 会诱导 BiOBr 的高能 (110) 晶面暴露，从而产生表面 OV 和路易斯酸位点。OV 有助于吸附水中的溶解氧，从而促进 -O2- 的生成。而 Bi(3-x)+ 路易斯酸位点则促进了反应物分子的吸附和降解。异质结的电荷转移重组机制提高了光生电子和空穴的利用率，改善了催化剂的光稳定性。这项研究为构建高效、稳定的带缺陷 Z 型异质结提供了一种用于光催化水处理的简单方法。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.