Analysis and Optimization of Parasitics-Induced Peak Frequency Shift in Gain-Boosted N-Path Switched-Capacitor Bandpass Filter

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2024-10-30 DOI:10.1109/LSSC.2024.3488001

Lei Lei;Zhiming Chen

引用次数: 0

Abstract

This letter proposes a

$C/g_{m}$

method for analyzing the peak frequency shift caused by parasitic parameters in gain-boosted N-path switched-capacitor bandpass filter (GB-BPF). This method eliminates the device width variable, addressing the interdependencies among various parameters in GB-BPF. Numerical solution for peak frequency shift is obtained, and the impact of each variable on frequency shift is accurately quantified. Using the proposed

$C/g_{m}$

variable, the optimal bias voltage is determined to minimize the peak frequency shift for same parasitic parameters. Additionally, optimization strategies for adjusting the filter capacitance and switching frequency are proposed. Finally, a GB-BPF is implemented in a 90-nm CMOS process. The accuracy of the analysis is verified by comparing the measured and simulated results with the theoretically derived results.

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分析和优化增益增强型 N 路径开关电容带通滤波器中由寄生引起的峰值频移

本文提出了一种 $C/g_{m}$ 方法，用于分析增益增强 N 路径开关电容带通滤波器（GB-BPF）中寄生参数引起的峰值频率偏移。该方法消除了器件宽度变量，解决了 GB-BPF 中各种参数之间的相互依存关系。得到了峰值频移的数值解，并准确量化了各变量对频移的影响。利用提出的 $C/g_{m}$ 变量，确定了最佳偏置电压，使相同寄生参数下的峰值频移最小。此外，还提出了调整滤波器电容和开关频率的优化策略。最后，在 90 纳米 CMOS 工艺中实现了 GB-BPF。通过比较测量和模拟结果与理论推导结果，验证了分析的准确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量