Global Shutter and Charge Binning With Quantum Dots Photodiode Arrays for NIR Imaging

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-11-04 DOI:10.1109/JEDS.2024.3489672

Loïc Baudoin;Arthur Arnaud;Sébastien Massenot;Pierre Magnan

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引用次数: 0

Abstract

New applications like depth measurements or multispectral imaging require to develop image sensors able to sense efficiently in the Near Infrared and Short-Wave Infrared where silicon is weakly sensitive. Colloidal Quantum Dots (CQD) technology is an interesting candidate to address these new applications as it allows to develop image sensors with high quantum efficiency at excitonic peak and high-resolution images. In this paper, we present an electrical model describing the electrical behavior of a designed and manufactured CQD photodiode. We use this model to explore a different architecture collecting holes instead of electrons. This architecture allows to control the charge collection inside the CQD thin film through the electric field. This property enables to implement global shutter functionality, to bin charges from several photodiodes, or to operate two physically interleaved photodiodes arrays alternatively with different types of pixel circuitries. These operating modes extend the capabilities of CQD image sensors in terms of applications.

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利用量子点光电二极管阵列进行全局快门和电荷分选以实现近红外成像

深度测量或多光谱成像等新应用需要开发能够有效感测硅敏感度较弱的近红外和短波红外的图像传感器。胶体量子点（CQD）技术是解决这些新应用的有趣候选技术，因为它可以开发出在激子峰值具有高量子效率和高分辨率图像的图像传感器。在本文中，我们提出了一个描述设计和制造的 CQD 光电二极管电气行为的电气模型。我们利用该模型探索了一种收集空穴而非电子的不同结构。这种结构可以通过电场控制 CQD 薄膜内部的电荷收集。利用这一特性，我们可以实现全局快门功能，从多个光电二极管中收集电荷，或利用不同类型的像素电路交替操作两个物理交错光电二极管阵列。这些操作模式扩展了 CQD 图像传感器的应用范围。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.