Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-28 DOI:10.1109/JEDS.2024.3486736

Xuejing Yang;Kyounghoon Yang

引用次数: 0

Abstract

In this paper, we report on newly introduced direct extraction methods applied for determining the extrinsic parasitic capacitances and inductances in RF test structures of Fully-Depleted-Silicon-On-Insulator (FDSOI) MOSFETs with a 28 nm gate length. Our approach leverages dummy structures and employs closed-form extraction techniques for precise parasitic parameter determination. Notably, we apply the closed-form extraction strategy for the first time to quantify the parasitic inductances of RF FDSOI-MOSFETs. To verify the accuracy of our extraction results based on a direct approach without optimization, we perform error analysis by comparing the modeled S-parameters of the small signal equivalent circuit to the measured results. Good agreement between the modeled and measured results not only at the cold bias but also at the saturation-mode operation region is achieved up to 110 GHz.

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用于射频表征 28 纳米 FDSOI MOSFET 外在寄生参数（频率高达 110 GHz）的直接提取方法

本文报告了新引入的直接提取方法，该方法适用于确定栅极长度为 28 nm 的全耗尽硅绝缘体上 (FDSOI) MOSFET 射频测试结构中的外寄生电容和电感。我们的方法利用假结构和闭式提取技术来精确确定寄生参数。值得注意的是，我们首次将闭式提取策略用于量化射频 FDSOI-MOSFET 的寄生电感。为了验证我们基于无优化直接方法的提取结果的准确性，我们通过比较小信号等效电路的建模 S 参数和测量结果来进行误差分析。不仅在冷偏压下，而且在高达 110 GHz 的饱和模式工作区域，建模结果和测量结果都实现了良好的一致性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.