Neuronal Multi Unit Activity Processing with Metal Oxide Memristive Devices

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Caterina Sbandati, Xiongfei Jiang, Deepika Yadav, Spyros Stathopoulos, Dana Cohen, Alex Serb, Shiwei Wang, Themis Prodromakis
{"title":"Neuronal Multi Unit Activity Processing with Metal Oxide Memristive Devices","authors":"Caterina Sbandati, Xiongfei Jiang, Deepika Yadav, Spyros Stathopoulos, Dana Cohen, Alex Serb, Shiwei Wang, Themis Prodromakis","doi":"10.1002/aelm.202400638","DOIUrl":null,"url":null,"abstract":"Intra-cortical brain-machine interfaces (BMIs), able to decode neural activity in real-time, represent a revolutionary opportunity for treating medical conditions. However, traditional systems focusing on single-neuron spike detection require high processing rates and power, hindering the up-scaling for neurons-population monitoring in clinical application. An intriguing proposition is the memristive integrating sensor (MIS) approach, which uses resistive RAM (RRAM) for threshold-based neural activity detection. MIS leverages analogue multi-state switching properties of metal-oxide RRAM to compress neural inputs by encoding above-threshold events in resistance displacement, facilitating efficient data down-sampling in the post-processing, enabling low-power, high-channel systems. Initially tested on spikes and local field potentials, here MIS is adapted to process multi-unit activity envelope (eMUA)—the envelope of entire spiking activity—which has recently been proposed as crucial input for real-time neuro-prosthetic control. Prior necessary modifications to the MIS for effective operation, this adaptation achieved over 95% sensitivity across two types of metal-oxide devices: Pt/TiO<sub><i>x</i></sub>/Pt and TiN/HfO<sub><i>x</i></sub>/TiN, proving its platform-agnostic capabilities. Furthermore, towards the integration of MIS with silicon chips, it is shown that it can reduce total system power consumption to below 1 µW, as RRAM encoding stage relaxes the signal preservation and noise requirements that challenge traditional complementary metal-oxide-semiconductor (CMOS) front-ends. This eMUA-MIS adaptation offers a viable pathway for developing more scalable and efficient BMIs for clinical use.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"146 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400638","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Intra-cortical brain-machine interfaces (BMIs), able to decode neural activity in real-time, represent a revolutionary opportunity for treating medical conditions. However, traditional systems focusing on single-neuron spike detection require high processing rates and power, hindering the up-scaling for neurons-population monitoring in clinical application. An intriguing proposition is the memristive integrating sensor (MIS) approach, which uses resistive RAM (RRAM) for threshold-based neural activity detection. MIS leverages analogue multi-state switching properties of metal-oxide RRAM to compress neural inputs by encoding above-threshold events in resistance displacement, facilitating efficient data down-sampling in the post-processing, enabling low-power, high-channel systems. Initially tested on spikes and local field potentials, here MIS is adapted to process multi-unit activity envelope (eMUA)—the envelope of entire spiking activity—which has recently been proposed as crucial input for real-time neuro-prosthetic control. Prior necessary modifications to the MIS for effective operation, this adaptation achieved over 95% sensitivity across two types of metal-oxide devices: Pt/TiOx/Pt and TiN/HfOx/TiN, proving its platform-agnostic capabilities. Furthermore, towards the integration of MIS with silicon chips, it is shown that it can reduce total system power consumption to below 1 µW, as RRAM encoding stage relaxes the signal preservation and noise requirements that challenge traditional complementary metal-oxide-semiconductor (CMOS) front-ends. This eMUA-MIS adaptation offers a viable pathway for developing more scalable and efficient BMIs for clinical use.

Abstract Image

利用金属氧化物薄膜器件进行神经元多单元活动处理
皮层内脑机接口(BMI)能够实时解码神经活动,是治疗疾病的革命性机遇。然而,专注于单个神经元尖峰检测的传统系统需要很高的处理速度和功率,阻碍了临床应用中神经元群体监测的升级。忆阻式集成传感器(MIS)方法是一个引人入胜的提议,它使用电阻式 RAM(RRAM)进行基于阈值的神经活动检测。MIS 利用金属氧化物 RRAM 的模拟多态开关特性,通过在电阻位移中编码阈值以上事件来压缩神经输入,从而促进后处理中的高效数据下采样,实现低功耗、高通道系统。MIS 最初是在尖峰和局部场电位上进行测试的,在这里被调整为处理多单位活动包络(eMUA)--整个尖峰活动的包络--最近被提出作为实时神经假体控制的关键输入。在为有效运行而对 MIS 进行必要修改之前,这种适应性在两种类型的金属氧化物设备上实现了超过 95% 的灵敏度:Pt/TiOx/Pt和TiN/HfOx/TiN,证明了其平台无关性。此外,在将 MIS 与硅芯片集成方面,由于 RRAM 编码阶段放宽了对传统互补金属氧化物半导体 (CMOS) 前端的信号保存和噪声要求,因此可以将系统总功耗降至 1 µW 以下。这种 eMUA-MIS 适应性为开发临床使用的更可扩展、更高效的 BMI 提供了一条可行的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信