Non Quasi-Static Model of DG Junctionless FETs

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-18 DOI:10.1109/JEDS.2024.3483299

Mohammad Bavir;Abdollah Abbasi;Ali Asghar Orouji;Farzan Jazaeri;Jean-Michel Sallese

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引用次数: 0

Abstract

In this paper an analytical non-quasi-static (NQS) model for long-channel symmetric double-gate junctionless field-effect transistors (JLFETs) operating in depletion mode is proposed for the first time. The model addresses the limitations of existing DC and AC models by incorporating time-dependent current continuity equations which are essentials to predict JLFETs behavior at high frequencies. Leveraging charge-based equations, the NQS model captures the delay between current and applied potentials arising beyond the quasi-static regime. Analytical solutions for small-signal perturbations allow the calculation of key transistor small signal parameters such as the gate transadmittance. The model’s validity is tested against TCAD simulations for various device parameters, including doping concentration and channel thickness. Good agreement between the model and TCAD simulations is observed across a wide frequency range, up to highly non-static transport conditions. This work lays the foundation for a comprehensive RF model of JLFETs for high-frequency applications.

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DG 无结场效应晶体管的非准静态模型

本文首次提出了在耗尽模式下工作的长沟道对称双栅极无结场效应晶体管（JLFET）的非准静态（NQS）分析模型。该模型解决了现有直流和交流模型的局限性，纳入了随时间变化的电流连续性方程，这些方程对于预测 JLFET 在高频率下的行为至关重要。借助基于电荷的方程，NQS 模型捕捉到了电流与准静态机制之外的外加电势之间的延迟。通过对小信号扰动的分析求解，可以计算出栅极跨导等关键晶体管小信号参数。针对各种器件参数（包括掺杂浓度和沟道厚度）的 TCAD 仿真对模型的有效性进行了测试。在很宽的频率范围内，直至高度非静态传输条件下，都能观察到模型与 TCAD 模拟之间的良好一致性。这项工作为高频应用中 JLFET 的全面射频模型奠定了基础。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.