Achieving 15.75% efficiency in solar cells: Advanced surface engineering using Tetra-Tert-Butyl-Tercarbazol-Benzonitrile and organic layer integration in n-type silicon wafer and hybrid Planar-Si systems

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
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Abstract

This study investigates the progress in n-type solar cells utilizing implanted Tetra-Tert-Butyl-Tercarbazol-Benzonitrile (TTB-TB-BNZ) front surface fields and diffused Ag rear emitters. The n-type structure utilizes a systematic approach involving surface passivation, localized laser ablation, and screen printing, similar to commercial p-type solar cells. This design enables the conversion from p-type to n-type cell production. Ion implantation allows for accurate management of doping profiles, improving processing sequences and increasing efficiency. Analysis indicates that reduced post-implant annealing durations lead to a shallower doping profile, enhancing short-wavelength response. Its results in efficiencies reaching up to 15.75 % on large-area 200 cm2 n-type wafers. The study also examines hybrid planar-Si/organic heterojunction solar cells, emphasizing Tetra-Tert-Butyl-Tercarbazol-Benzonitrile (TTB-TB-BNZ) to improve photovoltaic efficiency. UV–visible and fluorescence spectroscopy indicate a maximum absorption wavelength of 360 nm and an emission wavelength of 420 nm. The concentration of TTB-TB-BNZ in (4,4′-di(9H-carbazol-9-yl)-1,1′-biphenyl) (CBP) films reaches its peak effectiveness at 40–50 %, leading to notable enhancements in light absorption and charge transport. The Si/PEDOT: PSS heterojunction solar cells incorporating TTB-TB-BNZ demonstrate a power conversion efficiency (PCE) of 15.75 %. This result underscores the potential for scalable fabrication methods to improve photovoltaic performance.
实现 15.75% 的太阳能电池效率:使用四叔丁基三咔唑-苯腈的先进表面工程以及 n 型硅晶片和混合平面硅系统中的有机层集成
本研究探讨了利用植入式四叔丁基三咔唑-苯腈(TTB-TB-BNZ)前表面场和扩散式银后发射器的 n 型太阳能电池的研究进展。这种 n 型结构采用了与商用 p 型太阳能电池类似的系统方法,包括表面钝化、局部激光烧蚀和丝网印刷。这种设计实现了从 p 型电池到 n 型电池的生产转换。离子注入可实现对掺杂曲线的精确管理,改进加工顺序并提高效率。分析表明,缩短植入后退火持续时间可使掺杂剖面更浅,从而增强短波长响应。这使得 200 平方厘米大面积 n 型晶片的效率高达 15.75%。研究还考察了混合平面硅/有机异质结太阳能电池,强调利用四叔丁基三咔唑-苯腈(TTB-TB-BNZ)来提高光伏效率。紫外可见光谱和荧光光谱显示,其最大吸收波长为 360 纳米,发射波长为 420 纳米。在(4,4′-二(9H-咔唑-9-基)-1,1′-联苯)(CBP)薄膜中,TTB-TB-BNZ 的浓度在 40-50 % 时达到峰值效果,从而显著提高了光吸收和电荷传输能力。Si/PEDOT:PSS 异质结太阳能电池的功率转换效率 (PCE) 达到 15.75%。这一结果凸显了可扩展制造方法在提高光伏性能方面的潜力。
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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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