Achieving 15.75% efficiency in solar cells: Advanced surface engineering using Tetra-Tert-Butyl-Tercarbazol-Benzonitrile and organic layer integration in n-type silicon wafer and hybrid Planar-Si systems

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-11-02 DOI:10.1016/j.sse.2024.109025

Fahim Ullah , Kamran Hasrat , Sami Iqbal , Shuang Wang

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Abstract

This study investigates the progress in n-type solar cells utilizing implanted Tetra-Tert-Butyl-Tercarbazol-Benzonitrile (TTB-TB-BNZ) front surface fields and diffused Ag rear emitters. The n-type structure utilizes a systematic approach involving surface passivation, localized laser ablation, and screen printing, similar to commercial p-type solar cells. This design enables the conversion from p-type to n-type cell production. Ion implantation allows for accurate management of doping profiles, improving processing sequences and increasing efficiency. Analysis indicates that reduced post-implant annealing durations lead to a shallower doping profile, enhancing short-wavelength response. Its results in efficiencies reaching up to 15.75 % on large-area 200 cm2 n-type wafers. The study also examines hybrid planar-Si/organic heterojunction solar cells, emphasizing Tetra-Tert-Butyl-Tercarbazol-Benzonitrile (TTB-TB-BNZ) to improve photovoltaic efficiency. UV–visible and fluorescence spectroscopy indicate a maximum absorption wavelength of 360 nm and an emission wavelength of 420 nm. The concentration of TTB-TB-BNZ in (4,4′-di(9H-carbazol-9-yl)-1,1′-biphenyl) (CBP) films reaches its peak effectiveness at 40–50 %, leading to notable enhancements in light absorption and charge transport. The Si/PEDOT: PSS heterojunction solar cells incorporating TTB-TB-BNZ demonstrate a power conversion efficiency (PCE) of 15.75 %. This result underscores the potential for scalable fabrication methods to improve photovoltaic performance.

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实现 15.75% 的太阳能电池效率：使用四叔丁基三咔唑-苯腈的先进表面工程以及 n 型硅晶片和混合平面硅系统中的有机层集成

本研究探讨了利用植入式四叔丁基三咔唑-苯腈（TTB-TB-BNZ）前表面场和扩散式银后发射器的 n 型太阳能电池的研究进展。这种 n 型结构采用了与商用 p 型太阳能电池类似的系统方法，包括表面钝化、局部激光烧蚀和丝网印刷。这种设计实现了从 p 型电池到 n 型电池的生产转换。离子注入可实现对掺杂曲线的精确管理，改进加工顺序并提高效率。分析表明，缩短植入后退火持续时间可使掺杂剖面更浅，从而增强短波长响应。这使得 200 平方厘米大面积 n 型晶片的效率高达 15.75%。研究还考察了混合平面硅/有机异质结太阳能电池，强调利用四叔丁基三咔唑-苯腈（TTB-TB-BNZ）来提高光伏效率。紫外可见光谱和荧光光谱显示，其最大吸收波长为 360 纳米，发射波长为 420 纳米。在（4,4′-二（9H-咔唑-9-基）-1,1′-联苯）（CBP）薄膜中，TTB-TB-BNZ 的浓度在 40-50 % 时达到峰值效果，从而显著提高了光吸收和电荷传输能力。Si/PEDOT：PSS 异质结太阳能电池的功率转换效率 (PCE) 达到 15.75%。这一结果凸显了可扩展制造方法在提高光伏性能方面的潜力。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.