Strain Fluctuations Unlock Ferroelectricity in Wurtzites

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2024-11-04 DOI:10.1002/aelm.202400567

Steven M. Baksa, Simon Gelin, Seda Oturak, R. Jackson Spurling, Alireza Sepehrinezhad, Leonard Jacques, Susan E. Trolier-McKinstry, Adri C. T. van Duin, Jon-Paul Maria, Andrew M. Rappe, Ismaila Dabo

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Abstract

Ferroelectrics are of practical interest for non-volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated by film-thickness limitations, which impede polarization reversal under low applied voltage. Wurtzite materials, including magnesium-substituted zinc oxide (Zn,Mg)O, have been shown to exhibit scalable ferroelectricity as thin films. In this work, the origins of ferroelectricity in (Zn,Mg)O are explained, showing that large strain fluctuations emerge locally in (Zn,Mg)O and can reduce local barriers to ferroelectric switching by more than 40%. Concurrent experimental and computational evidence of these effects are provided by demonstrating polarization switching in ZnO/(Zn,Mg)O/ZnO heterostructures featuring built-in interfacial strain gradients. These results open up an avenue to develop scalable ferroelectrics by controlling strain fluctuations atomistically.

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应变波动揭开沃特兹石铁电性的神秘面纱

铁电因其可重新定向、晶体学定义的极化而对非易失性数据存储具有实际意义。然而，将传统铁电材料集成到超薄存储器中的努力却因薄膜厚度的限制而受挫，薄膜厚度的限制阻碍了低电压下的极化反转。包括镁取代氧化锌（Zn,Mg）O 在内的伍兹体材料已被证明具有可扩展的铁电性薄膜。这项研究解释了（Zn,Mg）O 中铁电性的起源，表明（Zn,Mg）O 中局部出现了大应变波动，可将铁电转换的局部障碍降低 40% 以上。通过在具有内置界面应变梯度的氧化锌/（Zn,Mg）O/氧化锌异质结构中演示极化转换，同时提供了这些效应的实验和计算证据。这些结果为通过原子控制应变波动来开发可扩展的铁电体开辟了一条途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.