Defect induced persistence photoconductivity in spray pyrolyzed ZnO thin films: Impact of Sm3+doping

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films Pub Date : 2024-10-21 DOI:10.1016/j.tsf.2024.140555

Manu Srivathsa, BV Rajendra

{"title":"Defect induced persistence photoconductivity in spray pyrolyzed ZnO thin films: Impact of Sm3+doping","authors":"Manu Srivathsa, BV Rajendra","doi":"10.1016/j.tsf.2024.140555","DOIUrl":null,"url":null,"abstract":"<div><div>The persistent photoconductivity of the rare earth ion doped ZnO is an emerging field. The present work focuses on the effect of samarium (Sm3+) ion doping on the persistence photo response behaviour ZnO host matrix. The Zn1-xSmxO (x = 0.0 to 0.10) thin films were deposited on chemically cleaned glass substrates using spray pyrolysis technique. The films showed polycrystalline nature and hexagonal wurtzite structure without any impurity peaks. The Zn0.93Sm0.07O films showed maximum crystallite size of 24.2 nm and minimum dislocation density. The gradual change in the thickness of the fibrous nature was observed with the addition of Sm3+ ions into ZnO lattice. Energy dispersive analysis of x-ray and X-ray photoelectron spectroscopy confirmed the presence of elements and its oxidation states in the deposited film respectively. The area under the curve of deconvoluted photoluminescence spectra of deposits confirmed the decrease in the various defect percentage with increase in the doping concentration of Sm3+ ions. The photoluminescence spectra of Zn0.93Sm0.07O films showed maximum near band edge emission and minimum defects. The Zn0.93Sm0.07O films showed higher carrier concentration of 1 × 1017 cm−3, mobility 32 cm2/Vs and lower resistivity of 1 × 102 Ω cm due to improved film quality. The Zn0.93Sm0.07O films exhibited the current value under dark and ultraviolet light illumination was in the range of 10−6 A and 10−4 A respectively. The maximum photocurrent was noticed at 375 nm which corresponds to the bandgap of the deposited films. The Zn0.93Sm0.07O films showed faster photo response (5 s and 131 s of response and recovery time) due to the presence of minimum trap states. Hence the Zn0.93Sm0.07O films can be used in the fabrication of light dependent resistors and ultraviolet sensors.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140555"},"PeriodicalIF":2.0000,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Solid Films","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0040609024003560","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}

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Abstract

The persistent photoconductivity of the rare earth ion doped ZnO is an emerging field. The present work focuses on the effect of samarium (Sm³⁺) ion doping on the persistence photo response behaviour ZnO host matrix. The Zn_1-xSm_xO (x = 0.0 to 0.10) thin films were deposited on chemically cleaned glass substrates using spray pyrolysis technique. The films showed polycrystalline nature and hexagonal wurtzite structure without any impurity peaks. The Zn_0.93Sm_0.07O films showed maximum crystallite size of 24.2 nm and minimum dislocation density. The gradual change in the thickness of the fibrous nature was observed with the addition of Sm³⁺ ions into ZnO lattice. Energy dispersive analysis of x-ray and X-ray photoelectron spectroscopy confirmed the presence of elements and its oxidation states in the deposited film respectively. The area under the curve of deconvoluted photoluminescence spectra of deposits confirmed the decrease in the various defect percentage with increase in the doping concentration of Sm³⁺ ions. The photoluminescence spectra of Zn_0.93Sm_0.07O films showed maximum near band edge emission and minimum defects. The Zn_0.93Sm_0.07O films showed higher carrier concentration of 1 × 10¹⁷ cm⁻³, mobility 32 cm²/Vs and lower resistivity of 1 × 10² Ω cm due to improved film quality. The Zn_0.93Sm_0.07O films exhibited the current value under dark and ultraviolet light illumination was in the range of 10⁻⁶ A and 10⁻⁴ A respectively. The maximum photocurrent was noticed at 375 nm which corresponds to the bandgap of the deposited films. The Zn_0.93Sm_0.07O films showed faster photo response (5 s and 131 s of response and recovery time) due to the presence of minimum trap states. Hence the Zn_0.93Sm_0.07O films can be used in the fabrication of light dependent resistors and ultraviolet sensors.

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喷雾热解氧化锌薄膜中缺陷诱导的持久光电导性：Sm3+ 掺杂的影响

稀土离子掺杂氧化锌的持久光电导性是一个新兴领域。本研究的重点是掺杂钐（Sm3+）离子对 ZnO 主基质持久光响应行为的影响。采用喷雾热解技术在化学清洗过的玻璃基底上沉积了 Zn1-xSmxO (x = 0.0 至 0.10) 薄膜。薄膜显示出多晶性质和六方菱面体结构，没有任何杂质峰。Zn0.93Sm0.07O 薄膜的最大晶粒尺寸为 24.2 nm，位错密度最小。在 ZnO 晶格中加入 Sm3+ 离子后，观察到纤维状的厚度逐渐发生变化。X 射线能量色散分析和 X 射线光电子能谱分别证实了沉积薄膜中元素的存在及其氧化态。沉积物的去卷积光致发光光谱曲线下的面积证实，随着 Sm3+ 离子掺杂浓度的增加，各种缺陷的百分比都在下降。Zn0.93Sm0.07O 薄膜的光致发光光谱显示出最大的近带边缘发射和最小的缺陷。由于薄膜质量的提高，Zn0.93Sm0.07O 薄膜显示出更高的载流子浓度（1 × 1017 cm-3）、迁移率（32 cm2/Vs）和更低的电阻率（1 × 102 Ω cm）。Zn0.93Sm0.07O 薄膜在暗光和紫外线照射下的电流值分别为 10-6 A 和 10-4 A。最大光电流出现在 375 纳米波长处，与沉积薄膜的带隙相对应。由于存在最小陷阱态，Zn0.93Sm0.07O 薄膜的光响应速度更快（响应和恢复时间分别为 5 秒和 131 秒）。因此，Zn0.93Sm0.07O 薄膜可用于制造光敏电阻和紫外线传感器。

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来源期刊

Thin Solid Films 工程技术-材料科学：膜

CiteScore

4.00

自引率

4.80%

发文量

381

审稿时长

7.5 months

期刊介绍： Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.