Experimental and theoretical study of 90Sr/90Y-n-Si/ZnO betavoltaic battery and theoretical prediction of homojunction betavoltaic cells performance

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-11-03 DOI:10.1016/j.mssp.2024.109059

Zohreh Movahedian, Hossein Tavakoli-Anbaran

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引用次数: 0

Abstract

Today, betavoltaic batteries has been considered due to their high energy density and long life for operating electrical systems in inaccessible and hostile environments. Conventional electrochemical batteries, despite their widespread use in electronic devices, have a limited lifetime and tend to degrade in extreme environmental conditions. The current paper pursues three goals. The first goal is to the experimental and theoretical investigation of a n-Si/ZnO heterojunction betavoltaic battery based on ⁹⁰Sr/⁹⁰Y source. The second goal is to optimize ZnO, SnO₂, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by Monte Carlo simulation (MCNP code). The third goal is to present a new approach for estimating the standard error in calculating the parameters of betavoltaic batteries. In order to fabrication of a n-Si/ZnO heterojunction, the ZnO nanospheres were placed on the n-Si (100) substrate using chemical bath deposition (CBD) technology. The Al and Au electrodes were deposited on the formed sample. Then this sample was exposed to the radiation of an external ⁹⁰Sr/⁹⁰Y source with an activity of 12.8 mCi. The experimental values obtained for the short circuit current (I_sc), open circuit voltage (V_oc), efficiency (η), and maximum output power (P_max) were 0.047 μA, 0.015 V, 3.4 × 10⁻⁴ percent, and 0.141 nW, respectively. To compare with the experiment, we investigated the n-Si/ZnO betavoltaic cell by MCNP code. In the simulation, the beta spectrum of the ⁹⁰Sr/⁹⁰Y source was considered. The calculated theoretical values for I_sc, V_oc, η, and P_max were 0.063 μA, 0.020 V, 6.4 × 10⁻⁴ percent, and 0.265 nW, respectively. The experimental results show that the simulation results can be valid. In the optimization of ZnO, SnO₂, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by MCNP code, it was found that the I_sc, V_oc, η, and P_max of the cubical model are better compared to the planar model. In the cubical model, P_max of ZnO, SnO₂, BN, and diamond betavoltaic batteries is 2633.34 nW ± 0.16 %, 1670.49 nW ± 0.15 %, 198.20 nW ± 0.17 %, and 1315.24 nW ± 0.15 %, respectively. In other words, P_max of the ZnO betavoltaic battery is about 58 %, 1229 %, and 100 % more than P_max of SnO₂, BN, and diamond betavoltaic batteries, respectively. P_max of the SnO₂ betavoltaic battery is about 743 % and 27 % more than P_max of BN and diamond betavoltaic batteries, respectively. The results show that ZnO and SnO₂ betavoltaic batteries can perform better compared to BN and diamond betavoltaic batteries. Also, their growth process is less expensive compared to BN and diamond.

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90Sr/90Y-n-Si/ZnO 光伏电池的实验和理论研究以及同质结光伏电池性能的理论预测

如今，光伏电池因其能量密度高、寿命长，可用于在难以接近和恶劣的环境中运行电气系统而受到重视。传统的电化学电池尽管在电子设备中广泛使用，但寿命有限，而且在极端环境条件下容易退化。本文有三个目标。第一个目标是对基于 90Sr/90Y 源的正硅/氧化锌异质结光伏电池进行实验和理论研究。第二个目标是通过蒙特卡洛模拟（MCNP 代码）优化两个平面和立方体模型中的氧化锌、二氧化锡、BN 和金刚石同结光伏电池。第三个目标是提出一种估算光伏电池参数计算标准误差的新方法。为了制造正硅/氧化锌异质结，利用化学沉积（CBD）技术将氧化锌纳米球置于正硅（100）基板上。铝和金电极沉积在形成的样品上。然后将该样品暴露在活度为 12.8 mCi 的外部 90Sr/90Y 源辐射下。短路电流 (Isc)、开路电压 (Voc)、效率 (η) 和最大输出功率 (Pmax) 的实验值分别为 0.047 μA、0.015 V、3.4 × 10-4% 和 0.141 nW。为了与实验进行比较，我们用 MCNP 代码研究了 n-Si/ZnO 光伏电池。在模拟中，考虑了 90Sr/90Y 源的β谱。计算得出的 Isc、Voc、η 和 Pmax 理论值分别为 0.063 μA、0.020 V、6.4 × 10-4% 和 0.265 nW。实验结果表明，模拟结果是有效的。在利用 MCNP 代码优化 ZnO、SnO2、BN 和金刚石同结光伏电池的两种平面模型和立方体模型时，发现立方体模型的 Isc、Voc、η 和 Pmax 比平面模型更好。在立方体模型中，ZnO、SnO2、BN 和金刚石光伏电池的 Pmax 分别为 2633.34 nW ± 0.16 %、1670.49 nW ± 0.15 %、198.20 nW ± 0.17 % 和 1315.24 nW ± 0.15 %。换言之，氧化锌光伏电池的 Pmax 分别比二氧化锡、BN 和金刚石光伏电池的 Pmax 高出约 58 %、1229 % 和 100 %。二氧化锡光伏电池的 Pmax 分别比 BN 和金刚石光伏电池的 Pmax 高出约 743% 和 27%。结果表明，氧化锌和二氧化锡光伏电池的性能优于硼和金刚石光伏电池。此外，与 BN 和金刚石相比，它们的生长过程成本更低。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.