Nguyen V. Vinh , Le C. Nhan , Dang X. Du , Khang D. Pham
{"title":"Novel Janus α-Au4XY (X/Y = S, Se, Te) monolayers with ultra-high carrier mobility: A first-principles study","authors":"Nguyen V. Vinh , Le C. Nhan , Dang X. Du , Khang D. Pham","doi":"10.1016/j.mssp.2024.109045","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, we theoretically propose a series of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY (X/Y = S, Se, Te; X <span><math><mo>≠</mo></math></span> Y) monolayers and investigate their structural stability, electronic features, and transport properties based on first-principle calculations. It is indicated that Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers have a structurally stable and can be synthesized experimentally. Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers exhibit a low Young’s modulus and their mechanical features are slightly anisotropic. At the ground state, Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers possess semiconducting characteristics with very steep band dispersions near the conduction band minimum, which is expected to ultra-high electron mobility. The electronic features of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY are highly sensitive to the biaxial strains <span><math><msub><mrow><mi>ɛ</mi></mrow><mrow><mi>x</mi><mi>y</mi></mrow></msub></math></span>, particularly the applied compressive biaxial strains. Interestingly, the transitions from the semiconductor to the metal phases are observed in all three configurations of <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY at <span><math><mrow><msub><mrow><mi>ɛ</mi></mrow><mrow><mi>x</mi><mi>y</mi></mrow></msub><mo>=</mo><mo>−</mo><mn>6</mn><mtext>%</mtext></mrow></math></span>. Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers exhibit superior transport characteristics with the electron mobility reaching up to <span><math><mrow><mn>3</mn><mo>.</mo><mn>20</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></math></span> cm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>V<sup>−1</sup>s<sup>−1</sup> (<span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>SSe monolayer). Our findings not only explore the outstanding electronic and transport features of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY nanostructures but also indicate their potential applications in nanoelectronics and nanoelectromechanical devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109045"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124009417","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we theoretically propose a series of Janus -AuXY (X/Y = S, Se, Te; X Y) monolayers and investigate their structural stability, electronic features, and transport properties based on first-principle calculations. It is indicated that Janus -AuXY monolayers have a structurally stable and can be synthesized experimentally. Janus -AuXY monolayers exhibit a low Young’s modulus and their mechanical features are slightly anisotropic. At the ground state, Janus -AuXY monolayers possess semiconducting characteristics with very steep band dispersions near the conduction band minimum, which is expected to ultra-high electron mobility. The electronic features of Janus -AuXY are highly sensitive to the biaxial strains , particularly the applied compressive biaxial strains. Interestingly, the transitions from the semiconductor to the metal phases are observed in all three configurations of -AuXY at . Janus -AuXY monolayers exhibit superior transport characteristics with the electron mobility reaching up to cmV−1s−1 (-AuSSe monolayer). Our findings not only explore the outstanding electronic and transport features of Janus -AuXY nanostructures but also indicate their potential applications in nanoelectronics and nanoelectromechanical devices.
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