ZnO Nanowire Cold Cathode Hemispherical X‐Ray Sources

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2024-10-29 DOI:10.1002/aelm.202400597

Zhipeng Zhang, Yunyao Zhang, Guofu Zhang, Runze Zhan, Shaozhi Deng, Ningsheng Xu, Jun Chen

{"title":"ZnO Nanowire Cold Cathode Hemispherical X‐Ray Sources","authors":"Zhipeng Zhang, Yunyao Zhang, Guofu Zhang, Runze Zhan, Shaozhi Deng, Ningsheng Xu, Jun Chen","doi":"10.1002/aelm.202400597","DOIUrl":null,"url":null,"abstract":"Curved or spherical X‐ray sources are significant for use in intraoperative radiotherapy, adaptive static medical imaging, and high‐throughput industrial inspection, but they are hard to achieve using traditional thermionic cathode point electron sources. In this study, copper (Cu)‐doped zinc oxide (ZnO) nanowires grown on a brass substrate with a designed shape are proposed to achieve cold cathode hemispherical X‐ray sources. The strain‐driven solid–liquid growth model of Cu‐doped ZnO nanowires is proposed, and the oxidation temperature‐dependent and time‐dependent growth characteristics are investigated to optimize the morphologies of ZnO nanowire cold cathodes with a typical turn‐on field of 7.36 MV m−1, a maximum current of 12.54 mA (4.93 mA cm−2) and a uniform field emission image with an area of 2.54 cm2. Hemispherical X‐ray sources formed by Cu‐doped ZnO nanowire field emitters grown on spherical brass alloy and an Al thin film transmission anode target deposited on a hemispherical quartz glass are successfully fabricated, achieving an operating voltage of 39 kV, a dose rate of 240 µGyair s−1 and a projection X‐ray imaging resolution of 2.8 lp mm−1, demonstrating their promising use in a variety of applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"35 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400597","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

Curved or spherical X‐ray sources are significant for use in intraoperative radiotherapy, adaptive static medical imaging, and high‐throughput industrial inspection, but they are hard to achieve using traditional thermionic cathode point electron sources. In this study, copper (Cu)‐doped zinc oxide (ZnO) nanowires grown on a brass substrate with a designed shape are proposed to achieve cold cathode hemispherical X‐ray sources. The strain‐driven solid–liquid growth model of Cu‐doped ZnO nanowires is proposed, and the oxidation temperature‐dependent and time‐dependent growth characteristics are investigated to optimize the morphologies of ZnO nanowire cold cathodes with a typical turn‐on field of 7.36 MV m−1, a maximum current of 12.54 mA (4.93 mA cm−2) and a uniform field emission image with an area of 2.54 cm2. Hemispherical X‐ray sources formed by Cu‐doped ZnO nanowire field emitters grown on spherical brass alloy and an Al thin film transmission anode target deposited on a hemispherical quartz glass are successfully fabricated, achieving an operating voltage of 39 kV, a dose rate of 240 µGyair s−1 and a projection X‐ray imaging resolution of 2.8 lp mm−1, demonstrating their promising use in a variety of applications.

查看原文本刊更多论文

氧化锌纳米线冷阴极半球形 X 射线源

弧形或球形 X 射线源对于术中放射治疗、自适应静态医学成像和高通量工业检测具有重要意义，但使用传统的热阴极点电子源很难实现。本研究提出在黄铜基底上生长具有设计形状的铜（Cu）掺杂氧化锌（ZnO）纳米线，以实现冷阴极半球形 X 射线源。提出了铜掺杂氧化锌纳米线的应变驱动固液生长模型，研究了氧化温度依赖性和时间依赖性生长特性，优化了氧化锌纳米线冷阴极的形态，其典型的开启场强为 7.36 MV m-1，最大电流为 12.54 mA（4.93 mA cm-2），场发射图像均匀，面积为 2.54 cm2。在球形黄铜合金上生长的铜掺杂氧化锌纳米线场发射器和沉积在半球形石英玻璃上的铝薄膜透射阳极靶形成的半球形 X 射线源制作成功，工作电压为 39 kV，剂量率为 240 µGyair s-1，投影 X 射线成像分辨率为 2.8 lp mm-1，证明了其在各种应用中的广阔前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.