Theoretical Investigation on Down-Taper-Type Frequency-Tunable Reflective Gyro-BWO

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-10-07 DOI:10.1109/TED.2024.3468301

Tien-Fu Yang;Chia-Chuan Chang;Hsin-Yu Yao;Tsun-Hsu Chang

引用次数: 0

Abstract

The effect of an upstream steep down taper added onto an interaction circuit with a single smooth down taper is investigated. Explorations of the physical mechanism reveal a twofold effect: enhancement of efficiency due to better electron bunching, and a shift in the optimal interaction phase. With the adoption of an additional down taper, the optimal phase for the highest peak efficiency shifts from 0° to 180°, suggesting the potential of efficiency-enhanced double down-taper circuits. Based on the elucidated mechanism, a piecewise frequency-tunable gyrotron is proposed, where a series of TE

$_{{0}{n}}$

modes tuning is expected to provide a wide tunable band across 320–480 GHz. This study contributes to the comprehension of reflective gyro-BWOs and facilitates further exploration of gyrotron oscillators toward the terahertz (THz) regime.

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下锥型频率可调反射式陀螺-BWO 的理论研究

我们研究了在具有单一平滑向下锥度的相互作用电路上添加上游陡峭向下锥度的效果。对物理机制的探索揭示了双重效应：由于电子束化效果更好而提高了效率，以及最佳相互作用相位发生了变化。采用额外的向下锥度后，最高峰值效率的最佳相位从 0° 移动到 180°，这表明效率增强型双向下锥度电路具有潜力。基于阐明的机制，我们提出了一种片式频率可调陀螺仪，其中一系列 TE $_{{0}{n}}$ 模式调谐有望提供跨越 320-480 GHz 的宽可调频带。这项研究有助于理解反射式陀螺-BWOs，并促进对太赫兹（THz）陀螺振荡器的进一步探索。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.