Redi Kristian Pingak , Amine Harbi , Fidelis Nitti , Soukaina Bouhmaidi , David Tambaru , Albert Z. Johannes , Nikodemus U.J. Hauwali , Abdul Wahid , M. Moutaabbid , Larbi Setti
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引用次数: 0
Abstract
This study aims to investigate the effects of incorporating cesium (Cs) and potassium (K) into the crystal structure of Rb2SnBr6. The structural, mechanical, and optoelectronic features of both the parent and derived compounds were calculated using DFT whereas their thermoelectric properties were evaluated using the BoltzTraP code. The optimized lattice parameter of Rb2SnBr6 was found to be 11.01 Å. The results also indicated that the incorporation of Cs (K) into the structure of Rb2SnBr6 increases (decreases) its lattice parameter to be 11.13 Å (10.94 Å). The compounds are predicted to possess chemical stability as indicated from their negative formation energy. In addition, their calculated elastic parameters satisfy the Born-Huang stability criteria and their elastic tensors are all positive, implying their mechanical stability. The results also showed that when Cs and K are introduced into the crystal structure of Rb2SnBr6, its brittle behavior slightly reduces and the ductile behavior grows in some direction, making them more flexible in various applications. The introduction of Cs and K was also found to widen the band gap of Rb2SnBr6 perovskite. The values of PBE bandgap of Rb2SnBr6, CsRbSnBr6, and KRbSnBr6 are 1.28 eV, 1.94 eV, and 2.01 eV while those of SCAN are 1.58 eV, 1.94 2.27 eV, and 2.34 eV, respectively. Furthermore, their remarkable optical properties including high absorption coefficient and low reflectivity ensured their potential applications for various applications including wide-band gap perovskite solar cells. The results also revealed that the incorporation of K into Rb2SnBr6 crystal structure improves its thermoelectric properties between 50 K and 500 K. The highest ZT values of KRbSnBr6, Rb2SnBr6, and CsRbSnBr6 are 0.766 (at 100 K), 0.749 (at 800 K), and 0.746 (at 800 K), respectively. This highlights their potential for thermoelectric applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.