Correlation of reverse dark current-voltage characteristics and gamma detection properties of a p-CdTe/n-CdTe/n+-Si vertical diode-type radiation detector

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-10-29 DOI:10.1016/j.mssp.2024.109039

M. Niraula, I. Torimoto, R. Okumura

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引用次数: 0

Abstract

The reverse dark current mechanism of a p-CdTe/n-CdTe/n⁺-Si vertical diode-type gamma ray detector, fabricated by growing epitaxial CdTe on Si substrates was studied and corelated with the detector's gamma detection properties. The detector dark current deviated from the Shockley-Reed-Hall (SRH) generation mechanism but showed tunneling was the dominant process. The dark current was strongly controlled by the dislocation densities and their distribution in the CdTe epilayer. Detectors that exhibited poor gamma detection properties had high dislocation densities and had large and nearly temperature independent dark currents. Good working detectors, on the other hand, showed small dark currents with a clear temperature dependence. These working detectors, fabricated with optimized crystal growth techniques, had a dislocation density nearly an order of magnitude lower than those of non-working or poorly working detectors.

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p-CdTe/n-CdTe/n+-Si 垂直二极管型辐射探测器的反向暗电流-电压特性与伽马检测特性的相关性

研究了通过在硅衬底上生长外延碲化镉而制造的 p-CdTe/n-CdTe/n+-Si 垂直二极管型伽马射线探测器的反向暗电流机制，并将其与探测器的伽马射线探测特性联系起来。探测器的暗电流偏离了肖克利-里德-霍尔（SRH）的产生机制，但显示隧道效应是主要过程。暗电流在很大程度上受碲化镉外延层中位错密度及其分布的控制。伽马检测性能较差的探测器具有较高的位错密度，暗电流较大且几乎与温度无关。另一方面，工作性能好的探测器暗电流较小，且明显与温度有关。这些工作探测器采用优化的晶体生长技术制造，其位错密度比不工作或工作性能差的探测器低近一个数量级。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.