Low-temperature soldering using Sn/Bi electrodeposited bilayer

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-10-29 DOI:10.1016/j.mssp.2024.109056

Wei-Li Wang , Sheng-Jye Cherng , Yu-Ting Huang , Runhua Gao , Hiroaki Tatsumi , Hiroshi Nishikawa , Chih-Ming Chen

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引用次数: 0

Abstract

Low-temperature soldering is a joining technology that attracts considerable attention in recent years due to its potential in energy saving and carbon reduction. Eutectic SnBi alloy is a common low-temperature solder. The material manufacturing using cost-effective electrodeposition suffers from composition control problem caused by very different reduction potentials between Sn and Bi. In this study, a Sn/Bi bilayer structure is constructed using electrodeposition and the microstructural evolution under thermal annealing is investigated in detail to evaluate its potential in replacement of eutectic SnBi alloy. Results show that interfacial liquation occurs rapidly in the Sn/Bi bilayer structure heated at 180 °C for only 5 s, and the bilayer structure completely transforms into a eutectic-like structure after 30 s. The microstructural evolution history is established with the help of phase diagram and electron microscopy examination. Shear test results indicate that the eutectic-like structure exhibits good mechanical property comparable to commercial eutectic SnBi solder paste. The rapid phase transformation feature and high shear strength make the Sn/Bi bilayer structure a promising candidate for low-temperature joining applications.

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使用锡/铋电沉积双电层进行低温焊接

低温焊接是近年来备受关注的一种连接技术，因为它具有节能减碳的潜力。共晶锡铋合金是一种常见的低温焊料。由于锡和铋的还原电位存在很大差异，因此使用经济高效的电沉积方法制造材料存在成分控制问题。本研究利用电沉积技术构建了锡/铋双层结构，并详细研究了其在热退火条件下的微观结构演变，以评估其替代共晶锡铋合金的潜力。结果表明，锡/铋双层结构在 180 °C 下加热仅 5 秒钟就迅速发生界面液化，30 秒钟后双层结构完全转变为类共晶结构。剪切测试结果表明，类共晶结构具有良好的机械性能，可与商用共晶锡铋焊膏媲美。快速相变特征和高剪切强度使锡/铋双层结构成为低温连接应用的理想候选材料。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.