Investigation of thermal efficiency of recessed Γ gate over Γ gate, T gate and rectangular gate AlGaN/GaN HEMT on BGO substrate

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
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Abstract

High electron mobility transistors (HEMTs) based on a wider bandgap AlGaN channel prove more efficient for high-voltage operation. The significant advantages of AlGaN channel HEMTs include a high critical electric field and higher saturation velocity. These characteristics contribute substantially to expanding the operating regime of power electronics, making them more suitable for applications requiring high voltage. This research work introduces a novel structure for a HEMT based on AlGaN/GaN with a recessed Gamma (Γ)-gate. The proposed HEMTs are composed of a 30 nm supply/barrier layer and an 18 nm channel layer, constructed on a Beta Gallium Oxide (BGO) substrate. Additionally, a delta-doped layer is incorporated to enhance device characteristics. The Direct Current (DC) features of the introduced scheme are compared with those of Γ-gate, rectangular and T-gate configurations, and analyzed using Silvaco TCAD software under various considerations. Key parameters including threshold voltage and transconductance are extracted from the DC characteristics. The proposed device provides a comparable cut-off frequency of 998 GHz for 20 nm gate length. Finally, the thermal efficiency of the introduced scheme, utilizing lateral lattice thermal conductivity, results in peak temperatures of 398.2 K, demonstrating superior performance compared to existing gate structures. The optimized performance of the device is assessed against existing devices, demonstrating its superiority among the compared schemes.
研究 BGO 基底面上凹Γ栅相对于Γ栅、T 栅和矩形栅 AlGaN/GaN HEMT 的热效率
事实证明,基于更宽带隙氮化铝沟道的高电子迁移率晶体管(HEMT)能更有效地实现高压运行。氮化铝沟道 HEMT 的显著优势包括临界电场高和饱和速度高。这些特性大大有助于扩大电力电子器件的工作范围,使其更适合需要高压的应用。这项研究工作介绍了一种基于 AlGaN/GaN 的 HEMT 的新型结构,它具有凹陷的伽马 (Γ) 栅极。所提出的 HEMT 由 30 nm 电源/势垒层和 18 nm 沟道层组成,构建在 Beta 氧化镓 (BGO) 衬底上。此外,还加入了一个三角掺杂层,以增强器件特性。我们将引入方案的直流 (DC) 特性与Γ栅极、矩形栅极和 T 型栅极配置的特性进行了比较,并使用 Silvaco TCAD 软件在各种考虑因素下进行了分析。从直流特性中提取了包括阈值电压和跨导在内的关键参数。在栅极长度为 20 nm 的情况下,拟议器件的截止频率可达 998 GHz。最后,利用横向晶格热传导,引入方案的热效率可使峰值温度达到 398.2 K,与现有的栅极结构相比,表现出更优越的性能。根据现有器件对该器件的优化性能进行了评估,结果表明该器件在各种比较方案中更胜一筹。
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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