{"title":"Influence of different vibration directions on the solder layer fatigue in IGBT modules","authors":"","doi":"10.1016/j.microrel.2024.115526","DOIUrl":null,"url":null,"abstract":"<div><div>Insulated-gate bipolar transistor (IGBT) modules are extensively utilized in high-speed trains, ships, and electric vehicles. Compared to those used in power systems, IGBT modules in these applications are more susceptible to vibration effects on their reliability. This paper proposes a multi-physics field simulation method and a lifetime model for IGBT modules to assess the impact of different vibration directions on solder layer fatigue. Initially, a multi-physics field model of the IGBT module is developed, incorporating electrical, thermal, mechanical, and vibration coupling. The effectiveness of this multi-physics simulation model is verified by an experimental platform. Subsequently, the influence of different vibration directions on solder layer fatigue in the IGBT module is analysed, and a life model of the IGBT is proposed through simulation. Finally, a power cycling with a vibration environment experimental platform is established to validate the effect of vibration on solder layer fatigue in the IGBT module. The simulation and experimental results indicate that vertical vibration accelerates the solder layer fatigue of IGBT modules, and the lifetime of an IGBT module operating under vertical vibration at 30 Hz is about 15 % shorter than that of an IGBT module operating under power cycling alone. The error between the calculated results of the solder layer failure and the experimental result is <5 %.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424002063","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Insulated-gate bipolar transistor (IGBT) modules are extensively utilized in high-speed trains, ships, and electric vehicles. Compared to those used in power systems, IGBT modules in these applications are more susceptible to vibration effects on their reliability. This paper proposes a multi-physics field simulation method and a lifetime model for IGBT modules to assess the impact of different vibration directions on solder layer fatigue. Initially, a multi-physics field model of the IGBT module is developed, incorporating electrical, thermal, mechanical, and vibration coupling. The effectiveness of this multi-physics simulation model is verified by an experimental platform. Subsequently, the influence of different vibration directions on solder layer fatigue in the IGBT module is analysed, and a life model of the IGBT is proposed through simulation. Finally, a power cycling with a vibration environment experimental platform is established to validate the effect of vibration on solder layer fatigue in the IGBT module. The simulation and experimental results indicate that vertical vibration accelerates the solder layer fatigue of IGBT modules, and the lifetime of an IGBT module operating under vertical vibration at 30 Hz is about 15 % shorter than that of an IGBT module operating under power cycling alone. The error between the calculated results of the solder layer failure and the experimental result is <5 %.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.