A Novel Strategy to Achieve High-Performance Titanium-Doped InZnO Thin-Film Transistors Using Atomic Layer Deposition

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-10-07 DOI:10.1109/TED.2024.3466836

Tianxing Hu;Min Li;Hua Xu;Hong Tao;Jianhua Zou;Junhong Zhou;Miao Xu;Junbiao Peng;Lei Wang

引用次数: 0

Abstract

Titanium-doped InZnO (TiIZO) thin-film transistors (TFTs) with different doping concentrations were successfully fabricated using plasma-enhanced atomic layer deposition (PEALD). Specifically, TiIZO TFTs with Ti cation doping concentration of 0.5% using tetra (dimethylamino) titanium (TDMATi) exhibited a high field-effect mobility of 51.22 cm2/Vs and a small subthreshold swing (SS) of 0.24 V/decade. Furthermore, compared to undoped IZO TFTs, TiIZO TFTs exhibited enhanced bias stability under positive and negative temperature bias stress. This improvement is attributed to the appropriate Ti doping concentration, which suppresses impurity oxygen defects, reduces the trap density at the insulator/channel interface, and introduces additional charge carriers.

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利用原子层沉积实现高性能掺钛 InZnO 薄膜晶体管的新策略

利用等离子体增强原子层沉积（PEALD）技术成功制备了不同掺杂浓度的钛掺杂InZnO（TiIZO）薄膜晶体管（TFT）。具体来说，使用四（二甲基氨基）钛（TDMATi）掺杂钛阳离子浓度为 0.5%的 TiIZO TFT 具有 51.22 cm2/Vs 的高场效应迁移率和 0.24 V/decade 的小亚阈值波动（SS）。此外，与未掺杂的 IZO TFT 相比，TiIZO TFT 在正负温度偏压应力下表现出更强的偏压稳定性。这种改善归功于适当的钛掺杂浓度，它抑制了杂质氧缺陷，降低了绝缘体/沟道界面的陷阱密度，并引入了额外的电荷载流子。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.