Performance Enhancement of Solution-Processed p-Type CsPbBr3 TFT by Ultraviolet-Ozone Treatment

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-10-04 DOI:10.1109/TED.2024.3466835

Wenlan Xiao;Yao Dong;Guangtan Miao;Guoxia Liu;Fukai Shan

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引用次数: 0

Abstract

As a pure inorganic perovskite material, CsPbBr3 exhibits the advantages of high optical gain, low nonradiation loss, and ambient preparation. In this work, the p-type CsPbBr3 perovskite thin film was prepared by solution process in the air, and the thin-film transistors (TFTs) based on CsPbBr3 were integrated. The effects of ultraviolet-ozone (UVO) treatment on the electrical and optical properties for the CsPbBr3 TFTs were investigated, and the residual oxygen and carbon-related impurities in CsPbBr3 thin film can be removed after UVO treatment. It is found that the CsPbBr3 TFT treated by UVO for 3 min demonstrates the highest electrical and optical performance, including the on/off current ratio of

$10^{{5}}$

, hole mobility of 1.08 cm

$^{{2}} \cdot \text {V}^{-{1}}\cdot \text {s}^{-{1}}$

, responsivity of 1.2 A/W, specific detectivity of

$4.52\times 10^{{12}}$

Jones, and external quantum efficiency (EQE) of 266%. Meanwhile, the TFTs based on CsPbBr3 with UVO treatment exhibit high environmental stability after storage in air for 30 days. The UVO treatment is effective for surface passivation of the CsPbBr3 thin film, and the performance of the TFT can be optimized correspondingly. This work provides a promising approach for the development of all inorganic, low-cost, and high-performance perovskite TFTs and photodetectors in the future.

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通过臭氧紫外线处理提高溶液加工对型铯硼铍 TFT 的性能

作为一种纯无机包晶材料，CsPbBr3 具有高光学增益、低非辐射损耗和常温制备等优点。本研究采用溶液法在空气中制备了 p 型 CsPbBr3 包晶体薄膜，并集成了基于 CsPbBr3 的薄膜晶体管（TFT）。研究了紫外臭氧（UVO）处理对 CsPbBr3 TFT 的电学和光学性能的影响，发现经过 UVO 处理后，CsPbBr3 薄膜中残留的氧和碳相关杂质可以被去除。研究发现，经紫外氧化物处理3分钟的CsPbBr3 TFT具有最高的电学和光学性能，包括10^{{5}}$的导通/关断电流比、1.08 cm $^{{2}} 的空穴迁移率。\cdot \text {V}^{-{1}}\cdot \text {s}^{-{1}}$ ，响应率为1.2 A/W，比检测率为4.52美元乘以10^{{12}}$ Jones，外部量子效率（EQE）为266%。同时，基于 CsPbBr3 并经过紫外氧化物处理的 TFT 在空气中存放 30 天后表现出很高的环境稳定性。紫外氧化物处理能有效地对 CsPbBr3 薄膜进行表面钝化，从而相应地优化 TFT 的性能。这项工作为未来开发全无机、低成本、高性能的过氧化物 TFT 和光电探测器提供了一种可行的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.