Schottky Diodes Based on Amorphous Ga2O3 Thin Films by UV-Ozone Treatment

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI:10.1109/TED.2024.3456772

Limeng Chen;Guangtan Miao;Hongfu Xie;Wenlan Xiao;Guoxia Liu;Fukai Shan

引用次数: 0

Abstract

In this report, amorphous Ga2O3 thin film was prepared by magnetron sputtering, and the Schottky barrier diodes (SBDs) based on amorphous Ga2O3 thin films were fabricated. The electrical performances of the SBDs based on amorphous Ga2O3 thin films with different UV-ozone (UVO) treatment conditions were systematically studied. It is found that the oxygen vacancies at the interface of the SBDs can be suppressed by the UVO treatment. The UVO-optimized SBDs exhibit superior electrical performance, including the near-unity ideality factor of 1.12, a Schottky barrier height of 1.05 eV, and a high rectification ratio of

$7.08\times 10^{{8}}$

. This method confirms the great potential for SBDs based on amorphous oxide semiconductors (AOSs) in the future.

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基于紫外臭氧处理非晶 Ga2O3 薄膜的肖特基二极管

本报告采用磁控溅射法制备了非晶 Ga2O3 薄膜，并制作了基于非晶 Ga2O3 薄膜的肖特基势垒二极管（SBD）。系统研究了不同紫外臭氧（UVO）处理条件下基于非晶 Ga2O3 薄膜的肖特基势垒二极管（SBD）的电学性能。研究发现，UVO 处理可抑制 SBD 表面的氧空位。经 UVO 优化的 SBDs 具有优异的电学性能，包括近乎统一的意向性因子 1.12、肖特基势垒高度 1.05 eV 和高整流比 $7.08/times 10^{{8}}$ 。该方法证实了基于非晶氧化物半导体（AOS）的 SBD 在未来的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.