Area and Energy-Efficient Quantum Tunneling-Based Thermal Sensor on 45nm RFSOI Technology

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shubham Patil;Abhishek Kadam;Jay Sonawane;Shreyas Deshmukh;R. Gaurav;Ajay Kumar Singh;Sandip Lashkare;Veeresh Deshpande;Laxmeesha Somappa;Udayan Ganguly
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引用次数: 0

Abstract

The compact and energy-efficient integrated temperature sensors are crucial for temperature monitoring and control. In this work, we propose a novel area and energy-efficient band-to-band tunneling (BTBT)-based oscillator for temperature sensing applications. It utilizes oscillation frequency as a metric for temperature sensing. The linearity in BTBT current with temperature can enable sensing with a simple readout mechanism. The initially designed circuit is simulated and analyzed in TCAD using mixed-mode simulation, followed by the fabrication of the proposed circuit using GF 45nm RFSOI technology. Measurements show the BTBT oscillator’s quasi-linear response as a function of temperature. Our proposed work enables the area ( $0.32~\mu \text { m}^{{2}}$ ) and energy-efficient temperature sensor (2.5 fJ/cycle) for the energy and area-constraint edge applications.
基于 45 纳米 RFSOI 技术的面积和能效量子隧道式热传感器
结构紧凑、高能效的集成温度传感器对于温度监测和控制至关重要。在这项工作中,我们为温度传感应用提出了一种面积小、能效高的基于带对带隧道(BTBT)的新型振荡器。它利用振荡频率作为温度传感的指标。BTBT 电流与温度呈线性关系,可通过简单的读出机制实现传感。在 TCAD 中使用混合模式仿真对初步设计的电路进行了仿真和分析,随后使用 GF 45nm RFSOI 技术制作了所提出的电路。测量结果表明,BTBT 振荡器具有温度函数的准线性响应。我们提出的工作实现了面积(0.32~\mu \text { m}^{{2}}$)和能效(2.5 fJ/周期)高的温度传感器,适用于能量和面积受限的边缘应用。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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