A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-10-08 DOI:10.1109/TED.2024.3454588

Zhenqiang Guo;Ziliang Fang;Jiangzhen Niu;Haiyun Wang;Lei Yan;Liang Tong;Jianhui Zhao;Saibo Yin;Shiqing Sun;Feng Li;Hongfang Wang;Jianhui Chen;Xiaobing Yan

{"title":"A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor","authors":"Zhenqiang Guo;Ziliang Fang;Jiangzhen Niu;Haiyun Wang;Lei Yan;Liang Tong;Jianhui Zhao;Saibo Yin;Shiqing Sun;Feng Li;Hongfang Wang;Jianhui Chen;Xiaobing Yan","doi":"10.1109/TED.2024.3454588","DOIUrl":null,"url":null,"abstract":"The inherent variability in memristor switching behavior has been a challenge to its adoption as a next-generation general-purpose memory. However, the randomness of its switching behavior may be helpful for hardware security applications. Herein, a true random number generator (TRNG) based on a high-speed Ag/amorphous-Si/Pt threshold switching (TS) device was constructed. The device possesses a large on-off ratio of about \n<inline-formula> <tex-math>$10^{{5}}$ </tex-math></inline-formula>\n and a fast switching speed of about 30 ns. The results show that the delay time of the device decreases as the pulse amplitude or the pulse frequency increases. Using the random delay time as a random source, we built a TRNG circuit and achieved the flipping of “0” and “1” with a fast bit generation rate of 48 kb/s. The random bits generated by our TRNG pass 14 randomness tests of the National Institute of Standards and Technology (NIST) without any processing. This work paves the way for diffusive memristors in hardware security applications in the era of the Internet of Things.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7126-7130"},"PeriodicalIF":2.9000,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10709342/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

The inherent variability in memristor switching behavior has been a challenge to its adoption as a next-generation general-purpose memory. However, the randomness of its switching behavior may be helpful for hardware security applications. Herein, a true random number generator (TRNG) based on a high-speed Ag/amorphous-Si/Pt threshold switching (TS) device was constructed. The device possesses a large on-off ratio of about

$10^{{5}}$

and a fast switching speed of about 30 ns. The results show that the delay time of the device decreases as the pulse amplitude or the pulse frequency increases. Using the random delay time as a random source, we built a TRNG circuit and achieved the flipping of “0” and “1” with a fast bit generation rate of 48 kb/s. The random bits generated by our TRNG pass 14 randomness tests of the National Institute of Standards and Technology (NIST) without any processing. This work paves the way for diffusive memristors in hardware security applications in the era of the Internet of Things.

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基于高速 Ag/a-Si/Pt Memristor 的真正随机数发生器

忆阻器开关行为的固有可变性一直是其作为下一代通用存储器所面临的挑战。然而，其开关行为的随机性可能有助于硬件安全应用。在此，我们构建了一个基于高速Ag/amorphous-Si/Pt阈值开关（TS）器件的真随机数发生器（TRNG）。该器件具有约 10^{{5}}$ 的大导通比和约 30 ns 的快速开关速度。结果表明，该器件的延迟时间随着脉冲振幅或脉冲频率的增加而减小。利用随机延迟时间作为随机源，我们构建了一个 TRNG 电路，并以 48 kb/s 的快速比特生成率实现了 "0 "和 "1 "的翻转。我们的 TRNG 生成的随机比特无需任何处理即可通过美国国家标准与技术研究院（NIST）的 14 项随机性测试。这项工作为物联网时代硬件安全应用中的扩散式忆阻器铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.