A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET

Abstract

The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect transistor (GFET) is linearized here using a Taylor series approximation. This simplification is shown to be valid from the magnitudes of the gate voltage not significantly higher than the Dirac voltage, and it enables the analytical determination of the transconductance parameter, the voltage related to residual charges, and a bias-independent series resistance of the GFET. Furthermore, a continuous representation of the device’s static response is achieved when substituting the extracted parameters into the model, regardless the transfer characteristic symmetry with respect to the Dirac voltage.