Scalable Metal–Organic Chemical Vapor Deposition of High Quality PtSe2

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Maximilian Prechtl, Stefan Heiserer, Marc Busch, Oliver Hartwig, Cormac Ó Coileáin, Tanja Stimpel-Lindner, Kuanysh Zhussupbekov, Kangho Lee, Ainur Zhussupbekova, Samuel Berman, Igor V. Shvets, Georg S. Duesberg
{"title":"Scalable Metal–Organic Chemical Vapor Deposition of High Quality PtSe2","authors":"Maximilian Prechtl, Stefan Heiserer, Marc Busch, Oliver Hartwig, Cormac Ó Coileáin, Tanja Stimpel-Lindner, Kuanysh Zhussupbekov, Kangho Lee, Ainur Zhussupbekova, Samuel Berman, Igor V. Shvets, Georg S. Duesberg","doi":"10.1002/aelm.202400392","DOIUrl":null,"url":null,"abstract":"Platinum diselenide (PtSe<sub>2</sub>), a 2D noble metal dichalcogenide, has recently received significant attention due to its outstanding properties. It undergoes a semimetal to semiconductor transition when thinned, offers a bandgap in the infrared range, and exhibits excellent stability in ambient conditions. These properties make it a prime active material in optoelectronic and chemical sensing devices. However, there is a high demand for a synthesis method that can produce large-scale and reliable high-quality PtSe<sub>2</sub>. In this study, the growth of PtSe<sub>2</sub> is presented by metal–organic vapor deposition on a variety of substrates. Comprehensive Raman, X-ray photoelectron, and X-ray diffraction spectroscopy, as well as scanning tunneling microscopy characterization reveals the high quality of the deposited PtSe<sub>2</sub>. Domains within the films are found to be up to several hundreds of nanometers in size, and their highly ordered crystalline structure is evident from atomic-scale measurements. Electrical characterization demonstrates improved conductivity relative to conventional synthesis methods. This study provides fundamental guidance for the scalable synthesis and implementation of high quality PtSe<sub>2</sub> layers with controllable thickness, offering a key requirement for the implementation of PtSe<sub>2</sub> in future applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"25 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400392","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Platinum diselenide (PtSe2), a 2D noble metal dichalcogenide, has recently received significant attention due to its outstanding properties. It undergoes a semimetal to semiconductor transition when thinned, offers a bandgap in the infrared range, and exhibits excellent stability in ambient conditions. These properties make it a prime active material in optoelectronic and chemical sensing devices. However, there is a high demand for a synthesis method that can produce large-scale and reliable high-quality PtSe2. In this study, the growth of PtSe2 is presented by metal–organic vapor deposition on a variety of substrates. Comprehensive Raman, X-ray photoelectron, and X-ray diffraction spectroscopy, as well as scanning tunneling microscopy characterization reveals the high quality of the deposited PtSe2. Domains within the films are found to be up to several hundreds of nanometers in size, and their highly ordered crystalline structure is evident from atomic-scale measurements. Electrical characterization demonstrates improved conductivity relative to conventional synthesis methods. This study provides fundamental guidance for the scalable synthesis and implementation of high quality PtSe2 layers with controllable thickness, offering a key requirement for the implementation of PtSe2 in future applications.

Abstract Image

高质量 PtSe2 的可扩展金属有机化学气相沉积
二硒化铂(PtSe2)是一种二维贵金属二硒化物,因其出色的特性最近备受关注。它在变薄时经历了从半金属到半导体的转变,在红外线范围内具有带隙,并在环境条件下表现出卓越的稳定性。这些特性使其成为光电和化学传感设备的主要活性材料。然而,人们对能够大规模、可靠地生产高质量 PtSe2 的合成方法有很高的要求。本研究介绍了在多种基底上通过金属有机物气相沉积生长 PtSe2 的方法。全面的拉曼、X 射线光电子和 X 射线衍射光谱以及扫描隧道显微镜表征揭示了沉积 PtSe2 的高质量。通过原子尺度的测量,发现薄膜内的晶域大小可达数百纳米,其高度有序的晶体结构显而易见。电学特性分析表明,与传统合成方法相比,其导电性能有所提高。这项研究为可控厚度的高质量 PtSe2 层的可扩展合成和实施提供了基本指导,为 PtSe2 在未来应用中的实施提供了关键要求。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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