{"title":"Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates","authors":"Miaodong Zhu, Guoxin Li, Hangtian Li, Zhonghong Guo, Ying Yang, Jianbo Shang, Yikang Feng, Yunshu Lu, Zexi Li, Xiaohang Li, Fangliang Gao, Wenqiu Wei and Shuti Li","doi":"10.1039/D4TC02720E","DOIUrl":null,"url":null,"abstract":"<p >Gallium nitride (GaN) based high elect mobility transistors (HEMTs) possess a multitude of excellent characteristics, enabling them to overcome the performance limitations of traditional silicon-based power devices. This comprehensive review discusses the challenges in the fabrication processes and device structures of p-type GaN (p-GaN) gate HEMTs on silicon substrates. Mainly by using Citespace software, this paper demonstrates the analytical results of keyword co-occurrence based on references related to p-GaN gate HEMTs from the core collection of Web of Science, revealing the prominent research topics in this area and discussing the relevant influencing factors and mechanisms of the electrical performance of p-GaN gate HEMTs. Moreover, various methods for optimizing the fabrication processes and device structures proposed in recent years are also reviewed. The future development of p-GaN gate HEMTs is explored, including the integration with more devices, the development of appropriate reliability verification standards, the expansion of production capabilities, and the incorporation of emerging two-dimensional materials.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7000,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/tc/d4tc02720e","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Gallium nitride (GaN) based high elect mobility transistors (HEMTs) possess a multitude of excellent characteristics, enabling them to overcome the performance limitations of traditional silicon-based power devices. This comprehensive review discusses the challenges in the fabrication processes and device structures of p-type GaN (p-GaN) gate HEMTs on silicon substrates. Mainly by using Citespace software, this paper demonstrates the analytical results of keyword co-occurrence based on references related to p-GaN gate HEMTs from the core collection of Web of Science, revealing the prominent research topics in this area and discussing the relevant influencing factors and mechanisms of the electrical performance of p-GaN gate HEMTs. Moreover, various methods for optimizing the fabrication processes and device structures proposed in recent years are also reviewed. The future development of p-GaN gate HEMTs is explored, including the integration with more devices, the development of appropriate reliability verification standards, the expansion of production capabilities, and the incorporation of emerging two-dimensional materials.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors