A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-04 DOI:10.1109/JEDS.2024.3474291

Minxi Cai;Wei Zhong;Bei Liu;Piaorong Xu;Jing Cao

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Abstract

A DC model is proposed for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) applicable to various active layer thicknesses. With the back surface potential and its coupling with the front surface potential being considered, an explicit potential solution is developed. Then, the analytical drain current and physical definition of threshold voltage are derived based on a non-chargesheet expression of free charge density. It is verified that in the previous models for AOS TFTs, typically ignoring the back surface potential and the active layer thickness effects could result in obvious deviations in the values of parameters during the characterization of DC performance, especially for scaled devices with low channel thicknesses. By comparing with numerical calculations and experimental data, this model is validated to be more suitable for AOS TFTs with decreased dimensions, which could give more realistic distributions of the density of states in the channel during parameter extraction.

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考虑到有源层厚度变化影响的基于物理的 AOS TFT 紧凑型直流模型

本文提出了适用于各种有源层厚度的非晶氧化物半导体（AOS）薄膜晶体管（TFT）的直流模型。考虑到后表面电势及其与前表面电势的耦合，建立了一个显式电势解决方案。然后，根据自由电荷密度的非电荷片表达式推导出分析漏极电流和阈值电压的物理定义。结果证明，在以往的 AOS TFT 模型中，通常忽略背面电势和有源层厚度效应会导致直流性能表征过程中的参数值出现明显偏差，特别是对于沟道厚度较低的缩放器件。通过与数值计算和实验数据的比较，验证了该模型更适用于尺寸减小的 AOS TFT，在参数提取过程中能给出更真实的沟道内态密度分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.