A Computational Digital LDO With Distributed Power-Gating Switches and Time-Based Fast-Transient Controller for Mobile SoC Application

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Dongha Lee;Seki Kim;Takahiro Nomiyama;Dong-Hoon Jung;Dongsu Kim;Jongwoo Lee
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引用次数: 0

Abstract

This letter introduces a 10 A computational digital LDO (CDLDO) for mobile SoC application specifically targeting a big CPU core. The proposed CDLDO eliminates the power-FET area overhead by reusing power gating switches (PGSs) already distributed throughout the entire CPU. The CDLDO employs a time-based exponential control (TEC) with a slope detector to achieve fast-transient response and improve stability. Furthermore, a step-back and a negative-step control are introduced to mitigate the effect of the propagation delay between the controller and the PGSs. Additionally, a pre-computational scheme significantly reduces calculation time and relaxes timing constraints during synthesis. The proposed CDLDO is implemented in 3 nm GAAFET CMOS process. An implemented IC of eight distributed CDLDO units provides a maximum load current of 10 A with a current density of 263 A/mm2. The CDLDO shows 94 mV droop under 6.5 A/1 ns load transition.
面向移动 SoC 应用的带分布式电源门开关和基于时间的快速瞬态控制器的计算型数字 LDO
这封信介绍了一种适用于移动 SoC 应用的 10 A 计算数字 LDO(CDLDO),专门针对大型 CPU 内核。所提出的 CDLDO 通过重复使用分布在整个 CPU 中的功率门控开关 (PGS),消除了功率场效应晶体管的面积开销。CDLDO 采用带有斜率检测器的时基指数控制 (TEC),以实现快速瞬态响应并提高稳定性。此外,还引入了退步和负步控制,以减轻控制器和 PGS 之间传播延迟的影响。此外,预计算方案大大减少了计算时间,并放宽了合成过程中的时序限制。所提出的 CDLDO 采用 3 nm GAAFET CMOS 工艺实现。由八个分布式 CDLDO 单元组成的集成电路可提供 10 A 的最大负载电流,电流密度为 263 A/mm2。CDLDO 在 6.5 A/1 ns 负载转换下显示出 94 mV 下降。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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