A 12 V Compliant Multichannel Dual Mode Neural Stimulator With 0.004% Charge Mismatch and a 4×VDD Tolerant On-Chip Discharge Switch in Low-Voltage CMOS

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2024-09-25 DOI:10.1109/LSSC.2024.3467341

Thanh Dat Nguyen;Alessandro Maggi;Gianluca Lazzi;Constantine Sideris

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Abstract

This letter presents a 12 V-compliant 4-channel neural stimulator fabricated in a low-voltage bulk CMOS process. Arrays of current memory cells are used to implement anodic and cathodic current sources to generate anodic and cathodic current ratios that are robust to process-voltage-temperature variations. A novel, fully integrated discharge switch is presented that tolerates an output voltage up to

$4\times V_{DD}$

, which is the highest reported for low-voltage bulk CMOS monopolar stimulators. The proposed neural stimulator can operate in both constant current mode (CCM) with a

$1~\mu $

-1.2 mA output current range and constant voltage mode (CVM) with a 1–11 V output voltage range. The output waveform is fully programmable, including cathodic and anodic amplitudes and ratios designed to have excellent charge balancing with only 0.004% charge mismatch.

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符合 12 V 标准的多通道双模式神经刺激器，电荷失配率为 0.004%，采用低压 CMOS，具有 4×VDD 容限的片上放电开关

这封信介绍了一种符合 12 V 标准的 4 通道神经刺激器，采用低压体 CMOS 工艺制造。利用电流存储单元阵列来实现阳极和阴极电流源，从而产生对工艺电压-温度变化具有鲁棒性的阳极和阴极电流比。该器件采用了新型全集成放电开关，可承受高达 $4\times V_{DD}$的输出电压，这是低压块状 CMOS 单极刺激器所能承受的最高电压。所提出的神经刺激器可以在输出电流范围为 1~\mu $ -1.2 mA 的恒流模式 (CCM) 和输出电压范围为 1-11 V 的恒压模式 (CVM) 下工作。输出波形完全可编程，包括阴极和阳极振幅和比率，其设计具有出色的电荷平衡性能，电荷失配率仅为 0.004%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量