{"title":"Copper Intercalation Effect on Thermoelectric Performance of Pristine Tin Selenide","authors":"Satendrasinh Bharthaniya, Mahesh Chaudhari, Ajay Agarwal, Kailash Chaudhari, Sunil Chaki","doi":"10.1002/crat.202400115","DOIUrl":null,"url":null,"abstract":"<p>Pristine tin selenide (SnSe) and copper (Cu) doped SnSe single crystals are grown by direct vapour transport technique. The energy dispersive X-ray, X-ray diffraction and Raman spectroscopic analysis of grown crystals show preferred stoichiometry having a single phase othorhombic SnSe. The electrical conductivity of SnSe and Cu doped SnSe are 24.24 and 106.06 S m<sup>−1</sup> at 310 K respectively which increase as temperature increases. Carrier concentration of grown single crystals are evaluated by the Hall effect. Lattice thermal conductivity of pristine SnSe is 0.61 W mK<sup>−1</sup>, that decreased by copper doping to 0.44 W mK<sup>−1</sup> at 310 K and for both the crystals it shows decrement as temperature increases to 483 K. Seebeck coefficient of the grown SnSe and Cu doped SnSe are positive and obtained values are 536.44 and 492.90 µV K<sup>−1</sup> respectively at 310 K that confirm the p-type semiconducting nature. Power factor, Figure of merit and thermoelectric compatibility factor of grown pristine SnSe is 0.25 × 10<sup>8</sup> µV mK<sup>−2</sup>, 0.005 and 0.02 Volt<sup>−1</sup> respectively and shows improvement in Cu doped SnSe, i.e., 0.08 × 10<sup>8</sup> µV mK<sup>−2</sup>, 0.017 and 0.07 Volt<sup>−1</sup> respectively at 310 K. This shows Cu doping in SnSe makes it an effective thermoelectric device contender.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 10","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Research and Technology","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/crat.202400115","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Chemistry","Score":null,"Total":0}
引用次数: 0
Abstract
Pristine tin selenide (SnSe) and copper (Cu) doped SnSe single crystals are grown by direct vapour transport technique. The energy dispersive X-ray, X-ray diffraction and Raman spectroscopic analysis of grown crystals show preferred stoichiometry having a single phase othorhombic SnSe. The electrical conductivity of SnSe and Cu doped SnSe are 24.24 and 106.06 S m−1 at 310 K respectively which increase as temperature increases. Carrier concentration of grown single crystals are evaluated by the Hall effect. Lattice thermal conductivity of pristine SnSe is 0.61 W mK−1, that decreased by copper doping to 0.44 W mK−1 at 310 K and for both the crystals it shows decrement as temperature increases to 483 K. Seebeck coefficient of the grown SnSe and Cu doped SnSe are positive and obtained values are 536.44 and 492.90 µV K−1 respectively at 310 K that confirm the p-type semiconducting nature. Power factor, Figure of merit and thermoelectric compatibility factor of grown pristine SnSe is 0.25 × 108 µV mK−2, 0.005 and 0.02 Volt−1 respectively and shows improvement in Cu doped SnSe, i.e., 0.08 × 108 µV mK−2, 0.017 and 0.07 Volt−1 respectively at 310 K. This shows Cu doping in SnSe makes it an effective thermoelectric device contender.
期刊介绍:
The journal Crystal Research and Technology is a pure online Journal (since 2012).
Crystal Research and Technology is an international journal examining all aspects of research within experimental, industrial, and theoretical crystallography. The journal covers the relevant aspects of
-crystal growth techniques and phenomena (including bulk growth, thin films)
-modern crystalline materials (e.g. smart materials, nanocrystals, quasicrystals, liquid crystals)
-industrial crystallisation
-application of crystals in materials science, electronics, data storage, and optics
-experimental, simulation and theoretical studies of the structural properties of crystals
-crystallographic computing