Enhanced photon emission from site- and energy-controlled InGaAs/GaAs quantum dots coupled to GaAs nanowires

IF 4.6 2区物理与天体物理 Q1 OPTICS

Optics and Laser Technology Pub Date : 2024-10-11 DOI:10.1016/j.optlastec.2024.111934

Benjamin Dwir

引用次数: 0

Abstract

InGaAs/GaAs quantum dots (QDs) embedded in a GaAs substrate are very useful photon sources, including single and entangled photons, due to their unperturbed environment. Contrary to self-formed QDs, those grown in pyramidal pits can be well controlled in position and energy, important properties for scaling. However, photon extraction efficiency from these QDs is limited due to the GaAs/Air index mismatch and non-directionality of the emission. GaAs nanowires grown vertically on top of these QDs can serve as resonant antennas, thus enhancing their emission and increasing their usefulness as sources. Such structures were fabricated and their photon emission was studied by micro-photoluminescence as function of excitation power and temperature. The structures showed an intensity increase by up to x36 over quantum dots without nanowire antennas.

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与砷化镓纳米线耦合的 InGaAs/GaAs 量子点的位控和能控增强光子发射

嵌入砷化镓基底的砷化镓/砷化镓量子点（QDs）由于其不受干扰的环境，是非常有用的光子源，包括单光子和纠缠光子。与自形成的量子点不同，在金字塔形凹坑中生长的量子点可以很好地控制位置和能量，这对于扩展来说是非常重要的特性。然而，由于砷化镓/空气指数不匹配和发射的非定向性，这些 QD 的光子提取效率有限。在这些 QDs 上垂直生长的砷化镓纳米线可作为谐振腔天线，从而增强其发射，提高其作为光源的实用性。我们制作了这种结构，并利用微光致发光技术研究了它们的光子发射与激发功率和温度的函数关系。与不带纳米线天线的量子点相比，这些结构的强度增加了 36 倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optics and Laser Technology 物理-光学

CiteScore

8.50

自引率

10.00%

发文量

1060

审稿时长

3.4 months

期刊介绍： Optics & Laser Technology aims to provide a vehicle for the publication of a broad range of high quality research and review papers in those fields of scientific and engineering research appertaining to the development and application of the technology of optics and lasers. Papers describing original work in these areas are submitted to rigorous refereeing prior to acceptance for publication. The scope of Optics & Laser Technology encompasses, but is not restricted to, the following areas: •development in all types of lasers •developments in optoelectronic devices and photonics •developments in new photonics and optical concepts •developments in conventional optics, optical instruments and components •techniques of optical metrology, including interferometry and optical fibre sensors •LIDAR and other non-contact optical measurement techniques, including optical methods in heat and fluid flow •applications of lasers to materials processing, optical NDT display (including holography) and optical communication •research and development in the field of laser safety including studies of hazards resulting from the applications of lasers (laser safety, hazards of laser fume) •developments in optical computing and optical information processing •developments in new optical materials •developments in new optical characterization methods and techniques •developments in quantum optics •developments in light assisted micro and nanofabrication methods and techniques •developments in nanophotonics and biophotonics •developments in imaging processing and systems