Amorphous In–Al–Sn–O Thin Film Transistors and Their Application in Optoelectronic Artificial Synapses

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2024-10-11 DOI:10.1002/aelm.202400457

Xiao Feng, Yu Zhang, Xinming Zhuang, Xianjin Feng

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Abstract

In‐Al‐Sn‐O (IATO) is a very promising novel amorphous oxide as the active layer of thin film transistors (TFTs). Herein, IATO TFTs are first fabricated with the effects of annealing on IATO films and TFTs being studied. The IATO films possessed amorphous structure, flat surface morphology, high visible light transmittance, and wide optical bandgap ≈4.20 eV before and after annealing even at 400 °C. The minimal surface roughness and internal defects are obtained for the 300 °C annealed IATO film. Correspondingly, the 300 °C annealed TFTs demonstrated the best overall performance including high saturation mobility (8.55 ± 0.62 cm2 V−1 s−1), low subthreshold swing (0.40 ± 0.07 V dec−1), ideal on/off current ratio (1.25 ± 0.09 × 108), and negligible hysteresis (0.23 ± 0.03 V) values. The 300 °C annealed TFTs are then applied in optoelectronic artificial synapses and exhibit typical synaptic properties, including excitatory postsynaptic current, paired‐pulse facilitation, and short‐term plasticity to long‐term plasticity conversion in response to light stimulation. The international Morse code and repetitive learning‐forgetting behavior of the human brain are also successfully simulated. In particular, an emotion‐memory efficiency model is proposed and the emotion effect on human memory efficiency is successfully imitated via the regulation of gate voltage.

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非晶 In-Al-Sn-O 薄膜晶体管及其在光电人工突触中的应用

In-Al-Sn-O (IATO) 是一种非常有前途的新型非晶氧化物，可用作薄膜晶体管 (TFT) 的有源层。本文首先制作了 IATO TFT，并研究了退火对 IATO 薄膜和 TFT 的影响。IATO 薄膜在 400 °C 退火前后均具有非晶结构、平坦的表面形貌、高可见光透过率和宽光带隙 ≈4.20 eV。300 °C 退火的 IATO 薄膜表面粗糙度和内部缺陷最小。相应地，经 300 °C 退火处理的 TFT 显示出最佳的整体性能，包括高饱和迁移率（8.55 ± 0.62 cm2 V-1 s-1）、低亚阈值摆动（0.40 ± 0.07 V dec-1）、理想的开/关电流比（1.25 ± 0.09 × 108）和可忽略的滞后（0.23 ± 0.03 V）值。300 °C 退火后的 TFT 被应用于光电人工突触，并表现出典型的突触特性，包括兴奋性突触后电流、成对脉冲促进以及光刺激下的短期可塑性到长期可塑性转换。国际摩尔斯电码和人脑的重复学习遗忘行为也被成功模拟。特别是提出了情绪-记忆效率模型，并通过调节栅极电压成功模拟了情绪对人类记忆效率的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.