A Process-Aware Analytical Gate Resistance Model for Nanosheet Field-Effect Transistors

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-30 DOI:10.1109/JEDS.2024.3469917

Junha Suk;Yohan Kim;Jungho Do;Garoom Kim;Woojin Rim;Sanghoon Baek;Seiseung Yoon;Soyoung Kim

引用次数: 0

Abstract

In this paper, we propose a process-aware analytical gate resistance model for nanosheet field-effect transistors (NSFETs). The proposed NSFET gate resistance is modeled by applying the distributed resistance coefficient, which can be used when current flows vertically and horizontally. By predicting the direction of current flow, the resistance components are approximated in series with parallel connection of divided segments. The proposed model can reflect changes in structural parameters, making it possible to predict the scaling trend of NSFETs. This is validated through TCAD simulation results. The proposed model can be implemented in general compact models such as the Berkeley short channel IGFET model (BSIM)-common multi-gate (CMG) and can be used to predict circuit performance more accurately.

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纳米片场效应晶体管的工艺感知分析栅极电阻模型

本文针对纳米片场效应晶体管（NSFET）提出了一种工艺感知分析栅极电阻模型。建议的 NSFET 栅极电阻模型采用分布式电阻系数，当电流垂直和水平流动时均可使用。通过预测电流流动的方向，电阻分量可近似为串联与并联的分段。所提出的模型可以反映结构参数的变化，从而可以预测 NSFET 的扩展趋势。TCAD 仿真结果验证了这一点。提出的模型可以在伯克利短沟道 IGFET 模型 (BSIM) - 普通多门 (CMG) 等一般紧凑模型中实现，并可用于更准确地预测电路性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.