Dual-Mode Thermal-Piezoresistive Coupled Resonators for Fast and Stable NIR Measurements With Differential Output

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-20 DOI:10.1109/LED.2024.3443128

Aojie Quan;Chen Wang;Hemin Zhang;Michael Kraft

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引用次数: 0

Abstract

This study reports a resonant Near-Infrared (NIR) detector based on dual-mode, self-oscillating Thermal-Piezoresistive Coupled Resonators. The resented device alleviates the current trade-offs between resolution and response time in Microelectromechanical Systems (MEMS) thermal detectors. The thermal-piezoresistive coupled resonators operate simultaneously in the in-phase and out-of-phase modes and the frequency difference between two modes is selected as the output metric. The square-shaped coupling area of the coupled resonators acted as the NIR sensing region because of its low thermal resistance. Our design demonstrated a

$700~\mu {s}$

response time, achieving 700-fold improvement compared to the conventional single-frequency output methods. Further, the differential output method inherently compensates for temperature drift, significantly increasing the immunity of device to thermal crosstalk by a factor of 25. A noise equivalent power density resolution of 253 pW/

$\sqrt {\textit {Hz}}$

is achieved.

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用于快速稳定近红外测量的双模热压阻耦合谐振器，带差分输出

这项研究报告了一种基于双模自振荡热-压阻耦合谐振器的谐振式近红外（NIR）探测器。该器件缓解了微机电系统（MEMS）热探测器目前在分辨率和响应时间之间的权衡问题。热压阻耦合谐振器在同相和非同相模式下同时工作，两个模式之间的频率差被选为输出指标。耦合谐振器的方形耦合区由于热阻较低而成为近红外感应区。我们的设计展示了 700~\mu {s}$ 的响应时间，与传统的单频输出方法相比提高了 700 倍。此外，差分输出方法本身可以补偿温度漂移，从而将器件的热串扰抗扰度显著提高了 25 倍。噪声等效功率密度分辨率达到 253 pW/$\sqrt{textit{Hz}}$。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.