Conductive Bridging Random Access Memory-Based Switch Matrix for Reconfigurable Interconnection of Chiplet Integration

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-21 DOI:10.1109/LED.2024.3447063

Zong-Rui Xu;Zhi-Yi Zhang;Zhangchen Hou;Aiping Cao;Zhigao Hu;Lin-Sheng Wu

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引用次数: 0

Abstract

A reconfigurable interconnection technology is proposed in this letter for chiplet integrated systems, with conductive bridging random access memory (CBRAM) based switch matrix. The switch matrix with a crossbar structure is implemented easily by spin-coating process, compatible with the packaging technology of high-resistivity silicon interposer. The equivalent circuit model is established. A

${2}\times {2}$

switch matrix prototype is developed with the insertion loss below 3.8 dB for arbitrary transmission path from DC to 67 GHz. The fabricated

${4}\times {4}$

switch matrix prototype achieves the 3-dB bandwidth over DC to 30 GHz. Under the data rate of 30 Gbps and the rise time of 15 ps, the near- and far-end crosstalks are all below 3% of the input signal swing, the eye height is 71%, and the root-mean-square jitter is only 1.26 ps. Noting that the CBRAM-based switch matrix consumes no static power, the proposed reconfigurable passive silicon interposer is a promising technology for flexible chiplet integration.

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基于导电桥接随机存取存储器的开关矩阵，用于芯片组集成的可重构互连

本信提出了一种用于芯片集成系统的可重构互连技术，该技术采用基于导电桥接随机存取存储器（CBRAM）的开关矩阵。通过旋涂工艺，可轻松实现具有横杆结构的开关矩阵，并与高电阻率硅中间件的封装技术兼容。等效电路模型已经建立。开发出了一个 ${2}\times {2}$ 开关矩阵原型，在直流到 67 GHz 的任意传输路径上，插入损耗低于 3.8 dB。所制作的 ${4}\times {4}$ 开关矩阵原型在直流至 30 GHz 范围内实现了 3 分贝带宽。在 30 Gbps 的数据速率和 15 ps 的上升时间条件下，近端和远端串扰均低于输入信号摆幅的 3%，眼高为 71%，均方根抖动仅为 1.26 ps。由于基于 CBRAM 的开关矩阵不消耗静态功耗，因此所提出的可重构无源硅插接器是一种很有前途的灵活芯片集成技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.