Observation and enhancement through alkali metal doping of p-type conductivity in the layered oxyselenides Sr2ZnO2Cu2Se2 and Ba2Zn1−xO2−xCu2Se2†

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Zahida Malik, Sarah Broadley, Sebastian J. C. Herkelrath, Daniel W. Newbrook, Liam Kemp, George Rutt, Zoltán A. Gál, Jack N. Blandy, Joke Hadermann, Daniel W. Davies, Robert D. Smyth, David O. Scanlon, Ruomeng Huang, Simon J. Clarke and Geoffrey Hyett
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Abstract

The optoelectronic properties of two layered copper oxyselenide compounds, with nominal composition Sr2ZnO2Cu2Se2 and Ba2ZnO2Cu2Se2, have been investigated to determine their suitability as p-type conductors. The structure, band gaps and electrical conductivity of pristine and alkali-metal-doped samples have been determined. We find that the strontium-containing compound, Sr2ZnO2Cu2Se2, adopts the expected tetragonal Sr2Mn3SbO2 structure with I4/mmm symmetry, and has a band gap of 2.16 eV, and a room temperature conductivity of 4.8 × 10−1 S cm−1. The conductivity of the compound could be increased to 4.2 S cm−1 when sodium doped to a nominal composition of Na0.1Sr1.9ZnO2Cu2Se2. In contrast, the barium containing material was found to have a small zinc oxide deficiency, with a sample dependent compositional range of Ba2Zn1−xO2−xCu2Se2 where 0.01 < x < 0.06, as determined by single crystal X-ray diffraction and powder neutron diffraction. The barium-containing structure could also be modelled using the tetragonal I4/mmm structure, but significant elongation of the oxygen displacement ellipsoid along the Zn–O bonds in the average structure was observed. This indicated that the oxide ion position was better modelled as a disordered split site with a displacement to change the local zinc coordination from square planar to linear. Electron diffraction data confirmed that the oxide site in Ba2Zn1−xO2−xCu2Se2 does not adopt a long range ordered arrangement, but also that the idealised I4/mmm structure with an unsplit oxide site was not consistent with the extra reflections observed in the electron diffractograms. The band gap and conductivity of Ba2Zn1−xO2−xCu2Se2 were determined to be 2.22 eV and 2.0 × 10−3 S cm−1 respectively. The conductivity could be increased to 1.5 × 10−1 S cm−1 with potassium doping in K0.1Ba1.9Zn1−xO2−xCu2Se2. Hall measurements confirmed that both materials were p-type conductors with holes as the dominant charge carriers.

Abstract Image

通过碱金属掺杂观察和增强层状氧化硒 Sr2ZnO2Cu2Se2 和 Ba2Zn1-x O2-x Cu2Se2 中的 p 型导电性。
我们研究了两种层状氧化硒铜化合物(标称成分分别为 Sr2ZnO2Cu2Se2 和 Ba2ZnO2Cu2Se2)的光电特性,以确定它们是否适合用作 p 型导体。我们测定了原始样品和掺杂碱金属的样品的结构、带隙和电导率。我们发现,含锶化合物 Sr2ZnO2Cu2Se2 采用了预期的具有 I4/mmm 对称性的四方 Sr 2 Mn 3 SbO 2 结构,其带隙为 2.16 eV,室温电导率为 4.8 × 10-1 S cm-1。当钠掺杂到标称成分为 Na0.1Sr1.9ZnO2Cu2Se2 时,该化合物的电导率可提高到 4.2 S cm-1。与此相反,通过单晶 X 射线衍射和粉末中子衍射测定,发现含钡材料存在少量氧化锌缺陷,其成分范围与样品有关,即 Ba2Zn1-x O2-x Cu2Se2(其中 0.01 < x < 0.06)。含钡结构也可以用四方 I4/mmm 结构来模拟,但在平均结构中,沿 Zn-O 键的氧位移椭圆体明显拉长。这表明,氧化物离子的位置最好被模拟为一个无序的分裂位点,其位移使局部锌配位从方形平面变为线形。电子衍射数据证实,Ba2Zn1-x O2-x Cu2Se2 中的氧化物位点没有采用长程有序排列,而且理想化的 I4/mmm 结构中的非分裂氧化物位点与电子衍射图中观察到的额外反射不一致。经测定,Ba2Zn1-x O2-x Cu2Se2 的带隙和电导率分别为 2.22 eV 和 2.0 × 10-3 S cm-1。在 K0.1Ba1.9Zn1-x O2-x Cu2Se2 中掺入钾后,电导率可提高到 1.5 × 10-1 S cm-1。霍尔测量结果证实,这两种材料都是以空穴为主要电荷载流子的 p 型导体。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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