Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-23 DOI:10.1109/JEDS.2024.3465594

Su Yeon Jung;Hyunwoo Kim;Jongmin Lee;Jang Hyun Kim

引用次数: 0

Abstract

We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE) characteristics and optimizing device model parameters through calibration, we extracted five key parameters from the hysteretic transfer curves of the FeFET: threshold voltage (Vth), on current (Iin), subthreshold swing (SS), off current (Ioff), and gate-induced drain leakage (GIDL). The extracted parameters were compared based on the presence or absence of FE and the ferroelectric thickness. It was confirmed that the presence of FE leads to increased variation due to dipole alignment with WFV, and that the electric field is maintained even with an increase in ferroelectric thickness

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铁电场效应晶体管功函数变化的影响

我们分析了铁电场效应晶体管（FeFET）中功函数变化（WFV）的影响。为了分析工作特性，我们采用了技术计算机辅助设计（TCAD）模拟。在评估了铁电（FE）特性并通过校准优化了器件模型参数后，我们从铁电场效应晶体管的滞后转移曲线中提取了五个关键参数：阈值电压（Vth）、导通电流（Iin）、亚阈值摆动（SS）、关断电流（Ioff）和栅极诱导漏极泄漏（GIDL）。根据是否存在 FE 和铁电厚度对提取的参数进行了比较。结果证实，FE 的存在会导致偶极对齐与 WFV 的变化增加，而且即使铁电厚度增加，电场也会保持不变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.