Enhanced response and recovery performance of α-hexathiophene sensors for NO2 gas by dual heterogeneous interface

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-09-19 DOI:10.1016/j.sse.2024.109006

Kaicaiayi Kelimu, Yiqun Zhang, Yangyang Zhu, Heping Su, Xi Lu, Li Juan Wang

引用次数: 0

Abstract

Organic semiconductor gas sensors of α-hexathiophene (α-6 T) films as active layers with dual heterogeneous interface layers of p-hexabiphenyl and pentacene films are prepared by continuous vacuum evaporation method. The enhanced properties of sensors are achieved by modulating the thickness of the α-6 T films. The sensitivity of 1373 %/ ppm and a theoretical low detection limit of 361 ppb are obtained. The sensors demonstrate fast response and recovery properties of 1.05 and 1.51 min for NO₂ gas of 20 ppm. The improved performance is attributed to the continuity of the interface layers and high adsorption of island-like growth. This approach is effective to improve organic sensors by introducing dual heterogeneous interface and tuning the growth of active layers.

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通过双异质界面提高α-六硫酚传感器对二氧化氮气体的响应和回收性能

通过连续真空蒸发法制备了以α-六噻吩（α-6 T）薄膜为活性层、对六联苯和五碳烯薄膜为双异质界面层的有机半导体气体传感器。通过调节 α-6 T 薄膜的厚度，增强了传感器的性能。传感器的灵敏度为 1373 %/ppm，理论检测限低至 361 ppb。对于 20 ppm 的二氧化氮气体，传感器的快速响应和恢复性能分别为 1.05 和 1.51 分钟。性能的提高归功于界面层的连续性和岛状生长的高吸附性。通过引入双异质界面和调整活性层的生长，这种方法可以有效地改进有机传感器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.